STAC2932B
HF/VHF/UHF RF power N-channel MOSFETs
Datasheet
-
production data
Features
•
Gold metallization
•
Excellent thermal stability
•
Common source push-pull configuration
•
P
OUT
= 300 W min. with 20 dB gain @ 175 MHz
•
In compliance with the 2002/95/EC European
directive
•
ST air cavity packaging technology - STAC
™
package
STAC244B
Air cavity
Description
The STAC2932B is a gold metallized N-channel
MOS field-effect RF power transistor, intended for
use in 50 V DC large signal applications up to 250
MHz.
The STAC2932B benefits from the latest
generation of efficient, patent-pending package
technology, otherwise known as STAC
™
.
2
3
Figure 1. Pin connection
1
1
3
1. Drain
2. Source (bottom side)
3. Gate
Table 1. Device summary
Order code
STAC2932BW
Marking
STAC2932
(1)
Base qty.
20
Package
STAC244B
Packaging
Tray
1. For more details please refer to
Chapter 7: Marking, packing and shipping specifications.
January 2014
This is information on a product in full production.
DocID15497 Rev 6
1/14
www.st.com
Contents
STAC2932B
Contents
1
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
1.2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
5
6
7
8
Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
DocID15497 Rev 6
STAC2932B
Electrical data
1
1.1
Electrical data
Maximum ratings
(T
CASE
= 25 °C)
Table 2. Absolute maximum ratings
Symbol
V
(BR)DSS(1)
V
DGR
V
GS
I
D
P
DISS
T
J
T
STG
1. T
J
= 150 °C
Parameter
Drain source voltage
Drain-gate voltage (R
GS
= 1 MΩ)
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
Value
125
125
±20
40
625
200
-65 to +150
Unit
V
V
V
A
W
°C
°C
1.2
Thermal data
Table 3. Thermal data
Symbol
R
thJC
Parameter
Junction - case thermal resistance
Value
0.28
Unit
°C/W
DocID15497 Rev 6
3/14
14
Electrical characteristics
STAC2932B
2
Electrical characteristics
T
CASE
= +25 °C
2.1
Static
Table 4. Static (per side)
Symbol
V
(BR)DSS
I
DSS
IGSS
Test conditions
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
I
DS
= 100 mA
V
DS
= 50 V
V
DS
= 0 V
I
D
= 250 mA
I
D
= 10 A
I
D
= 5 A
Min.
125
Typ.
Max.
Unit
V
50
250
1.5
2.5
4.0
3.0
5
468
μA
nA
V
V
S
pF
pF
pF
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
CRSS
V
GS
= 0 V
V
DS
= 50 V
f = 1 MHz
206
16
2.2
Dynamic
Table 5. Dynamic
Symbol
P
OUT
h
D
Test conditions
V
DD
= 50 V, I
DQ
= 2 x 250 mA, P
IN
= 4 W, f = 175 MHz
V
DD
= 50 V, I
DQ
= 2 x 250 mA, P
IN
= 4 W, f = 175 MHz
Min.
300
55
Typ.
390
68
Max.
Unit
W
%
4/14
DocID15497 Rev 6
STAC2932B
Impedance
3
Impedance
Figure 2. Current conventions
Table 6. Impedance data
Freq. (MHz)
175 MHz
Z
IN
(Ω)
2.0 - j2.0
Z
DL
(Ω)
3.5 + j5.2
Note:
Measured gate to gate and drain to drain, respectively.
DocID15497 Rev 6
5/14
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