BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
25 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3800 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[1]
[1]
[2]
f
(MHz)
3400 to 3600
V
DS
(V)
28
P
L(AV)
(W)
4.5
G
p
(dB)
15
D
(%)
24
ACPR
885k
ACPR
1980k
(dBc)
45
[2]
(dBc)
61
[2]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Measured within 30 kHz bandwidth.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I
Dq
of 225 mA:
Average output power = 4.5 W
Power gain = 15 dB
Drain efficiency = 24 %
ACPR
885k
=
45
dBc in 30 kHz bandwidth
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (3400 MHz to 3800 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multicarrier applications in the
3400 MHz to 3800 MHz frequency range
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G38-25 (SOT608A)
1
1
3
2
2
3
sym112
BLF6G38S-25 (SOT608B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G38-25
BLF6G38S-25
-
-
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
Version
SOT608A
SOT608B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
8.2
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
C;
P
L
= 25 W
Type
BLF6G38-25
BLF6G38S-25
Typ
1.8
1.8
Max
-
-
Unit
K/W
K/W
BLF6G38-25_BLF6G38S-25#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 14
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.4 mA
V
DS
= 10 V; I
D
= 40 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= +11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 1.4 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 1.4 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
-
6
-
-
-
-
Typ
-
2
-
8.2
-
2.8
0.37
0.59
Max
-
2.4
1.5
-
150
-
0.58
-
Unit
V
V
A
A
nA
S
pF
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel
bandwidth is 1.2288 MHz; f
1
= 3400 MHz; f
2
= 3500 MHz; f
3
= 3600 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 225 mA; T
case
= 25
C; unless otherwise specified, in a class-AB production
circuit.
Symbol
G
p
RL
in
D
ACPR
885k
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
Conditions
P
L(AV)
= 4.5 W
P
L(AV)
= 4.5 W
P
L(AV)
= 4.5 W
P
L(AV)
= 4.5 W
P
L(AV)
= 4.5 W
[1]
[1]
Min Typ Max Unit
12.5 15
-
22
-
-
24
-
-
dB
dB
%
dBc
dBc
10
-
45 40
61 56
ACPR
1980k
adjacent channel power ratio (1980 kHz)
[1]
Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 225 mA; P
L
= P
L(1dB)
; f = 3600 MHz.
BLF6G38-25_BLF6G38S-25#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 14
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
7.2 Ampleon WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
g
/ T
b
= 1 / 8;
FFT = 1024; zone type = PUSC;
= 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
30 subchannels; P
L
= P
L(nom)
+ 3.86 dB
Table 8.
Zone 0
Zone 0
Zone 0
Frame structure
Modulation technique
QPSK1/2
64QAM3/4
64QAM3/4
Data length
3
692
10000
FCH
data
data
2 symbols
4 subchannels
2 symbols
26 subchannels
44 symbols
30 subchannels
Frame contents
7.2.2 Graphs
001aah594
001aah595
30
EVM
(%)
24
18
G
p
(dB)
16
G
p
48
η
D
(%)
36
18
14
12
24
6
(1)
(2)
(3)
12
η
D
10
10
−1
12
0
10
−1
1
10
P
L
(W)
10
2
1
10
P
L(AV)
(W)
0
10
2
V
DS
= 28 V; I
Dq
= 225 mA; OFDMA signal;
frame duration = 5 ms; bandwidth = 10 MHz;
frequency band = WCS; n = 28 / 25; G = 1 / 8;
FFT = 1024; zone type = PUSC;
number of symbols = 46; number of subchannels = 30.
(1)
(2)
(3)
f = 3400 MHz
f = 3500 MHz
f = 3600 MHz
V
DS
= 28 V; I
Dq
= 225 mA; f = 3500 MHz; OFDMA signal;
frame duration = 5 ms; bandwidth = 10 MHz;
frequency band = WCS; n = 28 / 25; G = 1 / 8;
FFT = 1024; zone type = PUSC;
number of symbols = 46; number of subchannels = 30.
Fig 1.
EVM as function of load power; typical values
Fig 2.
Power gain and drain efficiency as functions
of average load power; typical values
BLF6G38-25_BLF6G38S-25#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 14
BLF6G38-25; BLF6G38S-25
WiMAX power LDMOS transistor
−17
ACPR
(dBc)
−29
001aah596
ACPR
10M
−41
(2)
(1)
ACPR
20M
−53
(1)
(2)
ACPR
30M
(2)
(1)
−65
10
−1
1
10
P
L(AV)
(W)
10
2
V
DS
= 28 V; I
Dq
= 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS;
n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30.
(1) Low frequency component
(2) High frequency component
Fig 3.
Adjacent channel power ratio as function of average load power; typical values
7.3 Single carrier N-CDMA broadband performance at 9 W average
7.3.1 Graphs
17
G
p
(dB)
16
G
p
15
25
001aah597
27
η
D
(%)
26
−40
ACPR
(dBc)
−50
(1)
(2)
001aah598
ACPR
885k
(1)
(2)
η
D
ACPR
1500k
14
24
−60
(2)
(1)
ACPR
1980k
13
23
12
3400
3450
3500
3550
f (MHz)
22
3600
−70
3400
3450
3500
3550
f (MHz)
3600
P
L(AV)
= 4.5 W.
V
DS
= 28 V; I
Dq
= 350 mA; P
L(AV)
= 4.5 W; single carrier
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 4.
Power gain and drain efficiency as functions
of frequency; typical values
Fig 5.
Adjacent channel power ratio as function of
frequency; typical values
BLF6G38-25_BLF6G38S-25#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 14
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