DTA015T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
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Outline
Parameter
V
CEO
I
C
R
1
Value
-50V
-100mA
100kΩ
VMT3
EMT3F
DTA015TM
(SC-105AA)
UMT3F
DTA015TEB
(SC-89)
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Features
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC015T series
6) Lead Free/RoHS Compliant.
DTA015TUB
(SC-85)
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Inner circuit
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Application
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
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Packaging specifications
B: BASE
C: COLLECTOR
E: EMITTER
Part No.
DTA015TM
DTA015TEB
DTA015TUB
Package
Package
size
VMT3
EMT3F
UMT3F
1212
1616
2021
Taping
code
T2L
TL
TL
Reel size Tape width
(mm)
(mm)
180
180
180
8
8
8
Basic
ordering
unit.(pcs)
8000
3000
3000
Marking
51
51
51
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© 2012 ROHM Co., Ltd. All rights reserved.
1/6
20121023 - Rev.001
DTA015T series
Datasheet
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Absolute maximum ratings
(T
a
= 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA015TM
Power dissipation
DTA015TEB
DTA015TUB
Junction temperature
Range of storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D*1
T
j
T
stg
Values
-50
-50
-5
-100
150
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
℃
℃
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T*2
Conditions
Min.
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
V
CB
= -50V
V
EB
= -4V
I
C
/ I
B
= -5mA / -0.25mA
Unit
Typ.
-
-
-
-
-
-0.05
-
100
250
Max.
-
-
-
-0.5
-0.5
-0.25
600
130
-
V
V
V
μA
μA
V
-
kΩ
MHz
-50
-50
-5
-
-
-
100
70
-
DC current gain
Input resistance
Transition frequency
V
CE
= -10V, I
C
= -5mA
-
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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© 2012 ROHM Co., Ltd. All rights reserved.
2/6
20121023 - Rev.001
DTA015T series
Datasheet
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Electrical characteristic curves
(T
a
=25°C)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2012 ROHM Co., Ltd. All rights reserved.
3/6
20121023 - Rev.001
DTA015T series
l
Dimensions
Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
4/6
20121023 - Rev.001
DTA015T series
l
Dimensions
Datasheet
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/6
20121023 - Rev.001
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