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BCR 196W E6327

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BCR 196W E6327 Overview

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

BCR 196W E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryBipolar Transistors - Pre-Biased
RoHSDetails
ConfigurationSingle
Transistor PolarityPNP
Typical Input Resistor47 kOhms
Typical Resistor Ratio2.14
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
DC Collector/Base Gain hfe Min50
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current70 mA
Peak DC Collector Current70 mA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
Height0.9 mm
Length2 mm
Width1.25 mm
Factory Pack Quantity3000
Unit Weight0.000176 oz
BCR196...
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
= 47kΩ ,
R
2
= 22kΩ )
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR196
BCR196W
C
3
R
1
R
2
1
B
2
E
EHA07183
Type
BCR196
BCR196W
Marking
WXs
WXs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR196,
T
S
102°C
BCR196W,
T
S
124°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
200
250
150
150 ... -65
°C
Value
50
50
80
10
70
mA
mW
Unit
V
1
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