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IPB80N06S207

Description
MOSFET MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size156KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPB80N06S207 Overview

MOSFET MOSFET

IPB80N06S207 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance6.3 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation250 W
Channel ModeEnhancement
PackagingReel
Height4.4 mm
Length10 mm
Transistor Type1 N-Channel
Width9.25 mm
Fall Time36 ns
Rise Time37 ns
Typical Turn-Off Delay Time61 ns
Typical Turn-On Delay Time16 ns
Unit Weight0.079014 oz
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
OptiMOS
®
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
PG-TO263-3-2
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
55
6.3
80
V
mΩ
A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N06S2-07
IPP80N06S2-07
IPI80N06S2-07
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code
SP0002-18818
SP0002-18810
SP0002-18817
Marking
2N0607
2N0607
2N0607
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
I
D
= 80 A
Value
80
80
320
530
±20
250
-55 ... +175
55/175/56
mJ
V
W
°C
Unit
A
Rev. 1.0
page 1
2006-03-13

IPB80N06S207 Related Products

IPB80N06S207 IPB80N06S207ATMA2 IPP80N06S207AKSA2 IPP80N06S207 IPP80N06S207AKSA1 IPB80N06S2-07
Description MOSFET MOSFET MOSFET N-Ch 55V 80A D2PAK-2 MOSFET MOSFET MOSFET MOSFET N-Ch 55V 80A TO220-3 OptiMOS MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value - Attribute Value
Manufacturer Infineon Infineon Infineon Infineon - Infineon
Product Category MOSFET MOSFET MOSFET MOSFET - MOSFET
Technology Si Si Si Si - Si
Mounting Style SMD/SMT SMD/SMT Through Hole Through Hole - SMD/SMT
Package / Case TO-263-3 TO-263-3 TO-220-3 TO-220-3 - TO-263-3
Number of Channels 1 Channel 1 Channel - 1 Channel - 1 Channel
Transistor Polarity N-Channel N-Channel - N-Channel - N-Channel
Configuration Single Single - Single - Single
Packaging Reel Reel Tube Tube - Reel
Height 4.4 mm 4.4 mm 15.65 mm 15.65 mm - 4.4 mm
Length 10 mm 10 mm 10 mm 10 mm - 10 mm
Transistor Type 1 N-Channel 1 N-Channel - 1 N-Channel - 1 N-Channel
Width 9.25 mm 9.25 mm 4.4 mm 4.4 mm - 9.25 mm
Unit Weight 0.079014 oz 0.077603 oz 0.063493 oz 0.084199 oz - 0.139332 oz
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