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FZ400R12KE3

Description
IGBT Modules 1200V 400A SINGLE
CategoryDiscrete semiconductor    The transistor   
File Size440KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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FZ400R12KE3 Overview

IGBT Modules 1200V 400A SINGLE

FZ400R12KE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)650 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2250 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)830 ns
Nominal on time (ton)400 ns
VCEsat-Max2.15 V
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ400R12KE3
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

V
CES

1200
400
650
800
2250
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,0







typ.
1,70
2,00
5,8
3,70
1,9
28,0
1,10


0,25
0,30
0,09
0,10
0,55
0,65
0,13
0,18
max.
2,15
6,5




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
I
C
= 16,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
I
C
= 400 A, V
CE
= 600 V, L
S
= 85 nH
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 400 A, V
CE
= 600 V, L
S
= 85 nH
V
GE
= ±15 V
R
Goff
= 1,8
V
GE
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT

t
r


t
d off


t
f


E
on

33,0

E
off
I
SC
R
thJC
T
vj op



-40
59,0


t
P
10 µs, T
vj
= 125°C
1600


A
0,055 K/W
125
°C
preparedby:MM
approvedby:WR
dateofpublication:2013-10-02
revision:3.2
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