BAR90...
Silicon Deep Trench PIN Diodes
•
Optimized for low bias current antenna
switches in hand held applications
•
Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
•
Low forward resistance
(typ. 1.3
Ω
@
I
F
= 3 mA)
•
Improved ON / OFF mode harmonic
distortion balance
•
Pb-free (RoHS compliant) package
BAR90-02EL
BAR90-02ELS
BAR90-098LRH
4
3
1
2
D1
D2
1
2
Type
BAR90-02ELS
BAR90-02EL
BAR90-098LRH
Package
TSSLP-2-3
TSLP-2-19
TSLP-4-7
Configuration
single, leadless
single, leadless
anti-parallel pair, leadless
L
S
(nH)
0.2
0.4
0.4
Marking
J*
X
T9
* Marking of TSSLP-2-3 with underline
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
≤
137 °C, BAR90-02ELS
T
S
≤
133°C, all others
Junction temperature
Operating temperature range
Storage temperature
1
Symbol
V
R
I
F
P
tot
Value
80
100
150
250
Unit
V
mA
mW
T
j
T
op
T
stg
150
-55 ... 125
-55 ... 150
°C
2013-06-10
BAR90...
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR90-02ELS
All others
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
Reverse current
V
R
= 60 V
Forward voltage
I
F
= 3 mA
I
F
= 100 mA
V
F
0.75
-
0.81
0.9
0.87
1
V
I
R
-
-
50
nA
V
(BR)
80
-
-
V
Symbol
min.
Values
typ.
max.
Unit
Symbol
R
thJS
Value
≤
90
≤
65
Unit
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-06-10
BAR90...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 1 mA,
f
= 100 MHz
I
F
= 3 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 1 mA,
f
= 1.8 GHz
I
F
= 3 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 0.9 GHz
V
R
= 0 V,
f
= 1.8 GHz
V
R
= 0 V,
f
= 2.45 GHz
1
BAR90-02EL
Symbol
min.
C
T
-
-
-
-
R
P
-
-
-
r
f
-
-
-
τ
rr
Values
typ.
max.
Unit
pF
0.25
0.3
0.19
0.18
35
5
4
2
1.3
0.8
750
0.35
-
-
-
k
Ω
-
-
-
Ω
-
2.3
-
-
ns
-
W
I
I
L
-
-
-
-
20
0.16
0.11
0.08
18.5
13.5
11.5
-
-
-
-
-
-
-
µm
dB
I
SO
-
-
-
in series configuration,
Z
= 50
Ω
3
2013-06-10
Embedded System
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