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DMTH6004LPS-13

Description
MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A
CategoryDiscrete semiconductor    The transistor   
File Size467KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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DMTH6004LPS-13 Overview

MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A

DMTH6004LPS-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F5
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time5 weeks 4 days
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)160 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.0031 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)120 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Green
DMTH6004LPSQ
60V 175° N-CHANNEL ENHANCEMENT MODE MOSFET
C
PowerDI5060-8
Product Summary
BV
DSS
R
DS(ON)
Max
3.1mΩ @ V
GS
= 10V
60V
4.5mΩ @ V
GS
= 4.5V
100A
I
D
T
C
= +25°
C
(Note 9)
100A
Features
Rated to +175° – Ideal for High Ambient Temperature
C
Environments
100% Unclamped Inductive Switching – Ensures More Reliable
and Robust End Application
Low R
DS(ON)
– Minimizes Power Losses
Low Q
g
– Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
NEW PRODUCT
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AECQ101, supported by a
PPAP and is ideal for use in:
Primary Switch in Isolated DC-DC
Synchronous Rectifier
Load Switch
Mechanical Data
Case: PowerDI 5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
®
PowerDI5060-8
S
D
D
D
D
Pin1
S
S
G
Top View
Bottom View
Internal Schematic
Top View
Pin Configuration
Ordering Information
(Note 5)
Part Number
DMTH6004LPSQ-13
Notes:
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
D
D
D
H6004LS
YY WW
= Manufacturer’s Marking
H6004LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
DMTH6004LPSQ
Document number: DS38165 Rev. 1 - 2
1 of 7
www.diodes.com
December 2016
© Diodes Incorporated

DMTH6004LPS-13 Related Products

DMTH6004LPS-13
Description MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A
Is it Rohs certified? conform to
package instruction SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code not_compliant
ECCN code EAR99
Factory Lead Time 5 weeks 4 days
Other features HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 160 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 22 A
Maximum drain-source on-resistance 0.0031 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-F5
JESD-609 code e3
Number of components 1
Number of terminals 5
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 120 A
Guideline AEC-Q101
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form FLAT
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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