ZTX560 datasheet, PDF - EEWORLD Datasheet

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ZTX560: DescriptionBipolar Transistors - BJT PNP High V 500V; CategoryDiscrete semiconductor The transistor; File Size112KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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Bipolar Transistors - BJT PNP High V 500V

ZTX560 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	500 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	60 MHz

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ZTX560

E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES

•

Excellent h

FE

characterisristics up to I

C

=50mA

•

Low Saturation voltages

PARTMARKING

ZTX

560

PIN-OUT

E-LINE

VALUE

-500

-5

-500

-150

1

-55 to +150

UNIT

V

mA

W

°C

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

Operating and storage temperature range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Collector-base breakdown boltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter turn on voltage

Static forward current transfer ratio

SYMBOL

V

(BR)CBO

V

BR(CEO)

V

(BR)EBO

I

CBO

; I

CES

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

100

80

15 typ

60

8

110 typ.

1.5 typ.

MIN.

-500

-5

-100

-0.2

-0.5

-0.9

300

MHz

pF

ns

s

MAX.

UNIT

V

nA

V

CONDITIONS

I

C

=-100µA

I

C

=-10mA*

I

E

=-100µA

V

CB

=-500V; V

CE

=-500V

V

EB

=-5V

I

C

=-20mA,

I

C

=-50mA,

I

B

=-2mA*

I

B

=-10mA*

I

C

=-50mA, I

B

=-10mA*

I =-50mA, V

CE

=-10V*

C

I

C

=-1mA, V

CE

=-10V

I

C

=-50mA, V

CE

=-10V*

I

C

=-100mA, V

CE

=-10V*

V

CE

=-20V, I

C

=-10mA,

f=50MHz

V

CB

=-20V, f=1MHz

V

CE

=-100V, I

C

=-50mA,

I

B1

=-5mA, I

B2

=10mA

Transition frequency

Output capacitance

Switching times

f

T

C

obo

t

on

t

off

* Measured under pulsed conditions. Pulse width=300 s. Duty cycle

2%

ISSUE 2 - SEPTEMBER 2006

1

SEMICONDUCTORS

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