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DTC144TT1G

Description
Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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DTC144TT1G Overview

Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN

DTC144TT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeSC-59
package instructionLEAD FREE, CASE 318D-04, SC-59, 3 PIN
Contacts3
Manufacturer packaging codeCASE 318D-04
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.338 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
DTC144TT1
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base−emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SC−59
package which is designed for low power surface mount applications.
Features
http://onsemi.com
NPN SILICON BIAS
RESISTOR TRANSISTOR
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model: Class 1
ESD Rating
Machine Model: Class B
The SC−59 package can be soldered using wave or reflow. The
modified gull−winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Pb−Free Package is Available
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
PIN 2
BASE
(INPUT)
R
1
R
2
3
1
2
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead
Junction and Storage Temperature
Range
Symbol
P
D
Max
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
540 (Note 1)
370 (Note 2)
264 (Note 1)
287 (Note 2)
−55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
8T = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
1
8T M
G
G
R
qJA
R
qJL
T
J
, T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 2
Publication Order Number:
DTC144TT1/D

DTC144TT1G Related Products

DTC144TT1G DTC144TT1
Description Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Is it Rohs certified? conform to incompatible
Maker ON Semiconductor ON Semiconductor
Parts packaging code SC-59 SC-59
package instruction LEAD FREE, CASE 318D-04, SC-59, 3 PIN CASE 318D-04, SC-59, 3 PIN
Contacts 3 3
Manufacturer packaging code CASE 318D-04 CASE 318D-04
Reach Compliance Code compliant not_compliant
ECCN code EAR99 EAR99
Other features BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 160 160
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e0
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 240
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.338 W 0.338 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin/Lead (Sn80Pb20)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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