MBR20045CT thru MBR200100CTR
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 200 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R)
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge
current (per leg)
Maximum forward
voltage (per leg)
Reverse current at rated
DC blocking voltage
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 100 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBR20045CT(R) MBR20060CT(R) MBR20080CT(R) MBR200100CT(R)
200
1500
0.70
1
10
30
200
1500
0.75
1
10
30
200
1500
0.84
1
10
30
200
1500
0.84
1
10
30
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance,
junction-case,
per leg
R
ΘJC
0.45
0.45
0.45
0.45
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBR20045CT thru MBR200100CTR
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
MBR20045CT thru MBR200100CTR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
GeneSiC Semiconductor
:
MBR200100CT MBR200100CTR MBR20080CT MBR20080CTR MBR20045CT MBR20060CTR MBR20045CTR
MBR20060CT
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