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D2F60-4103

Description
Rectifiers VRM=600 IFSM=60
CategoryDiscrete semiconductor    diode   
File Size305KB,2 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
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D2F60-4103 Overview

Rectifiers VRM=600 IFSM=60

D2F60-4103 Parametric

Parameter NameAttribute value
package instruction2F, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current1.4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
Rectifier Diode
面実装デバイス 単½型
Surface Mounting Device Single Diode
D2F60
600V 1.4A
特長
• 小型 SMD
• 耐湿性に優れ高信頼性
■外観図 OUTLINE
Package:2F
カ½ードマーク
Cathode mark
Unit : mm
Weight : 0.16g typ.)
2FV
60
82
4
+①
② −
Feature
• Small SMD
• High-Reliability
品名略号
Type No.
ロッ
ト記号
(例)
級表示
(例) Date code
Class
7.6
2.8
外½図については新電元 Web サイト又は〈半導½½品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
■定格表 RATINGS
項  目
Item
保存温度
Storage Temperature
接合部温度
Operation Junction Temperature
せん頭逆電圧
Maximum Reverse Voltage
出力電流
Average Rectified Forward Current
せん頭サージ順電流
Peak Surge Forward Current
記号
条 件
Symbol Conditions
T
stg
T
j
V
RM
I
O
I
FSM
品 名
Type No.
D2F60
−55∼150
150
600
単½
Unit
V
A
A
アルミナ基板実装
On alumina substrate
プリント基板実装
On glass-epoxy substrate
50Hz 正弦波,非繰り返し1サイクルせん頭値,Tj = 25℃
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25℃
50Hz 正弦波,抵抗負荷,Ta = 25℃
50Hz sine wave,
Resistance load, Ta = 25℃
1.4
1.1
60
順電圧
Forward Voltage
逆電流
Reverse Current
V
F
I
R
θjl
I
F =
1.4A,
パルス測定
Pulse measurement
V
R =
V
RM
,
パルス測定
Pulse measurement
MAX
MAX
MAX
1.05
10
24
90
120
V
μA
℃/W
接合部・リード間
Junction to Lead
接合部・周囲間
Junction to Ambient
アルミナ基板実装
On alumina substrate
プリント基板実装
On glass-epoxy substrate
熱抵抗
Thermal Resistance
θja
MAX
MAX
196
(J534)

D2F60-4103 Related Products

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Description Rectifiers VRM=600 IFSM=60 Rectifiers VRM=600 IFSM=60 Rectifiers VRM=600 IFSM=60 Rectifiers VRM=600 IFSM=60 Rectifiers General Rectifying Diode - SMD
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Base Number Matches 1 1 1 1 1
package instruction 2F, 2 PIN 2F, 2 PIN - 2F, 2 PIN -
application GENERAL PURPOSE GENERAL PURPOSE - GENERAL PURPOSE -
Configuration SINGLE SINGLE - SINGLE -
Diode component materials SILICON SILICON - SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE -
Maximum forward voltage (VF) 1.05 V 1.05 V - 1.05 V -
JESD-30 code R-PDSO-C2 R-PDSO-C2 - R-PDSO-C2 -
Maximum non-repetitive peak forward current 60 A 60 A - 60 A -
Number of components 1 1 - 1 -
Phase 1 1 - 1 -
Number of terminals 2 2 - 2 -
Maximum operating temperature 150 °C 150 °C - 150 °C -
Maximum output current 1.4 A 1.1 A - 1.4 A -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE -
Maximum repetitive peak reverse voltage 600 V 600 V - 600 V -
Maximum reverse current 10 µA 10 µA - 10 µA -
surface mount YES YES - YES -
Terminal form C BEND C BEND - C BEND -
Terminal location DUAL DUAL - DUAL -
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