DPG10P400PJ
HiPerFRED²
V
RRM
I
FAV
t
rr
= 2x 400 V
=
=
10 A
45 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DPG10P400PJ
Backside: isolated
1
2
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
ISOPLUS220
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG10P400PJ
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
0.78
19.4
2.5
0.50
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 200 V f = 1 MHz
I
F
=
15 A; V
R
= 270 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
-di
F
/dt = 200 A/µs
16
4
5.5
45
70
60
130
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
400
400
1
0.18
1.28
1.48
1.02
1.24
10
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 400 V
V
R
= 400 V
I
F
=
I
F
=
I
F
=
I
F
=
10 A
20 A
10 A
20 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 145°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG10P400PJ
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
ISOPLUS220
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
mm
mm
V
V
2
20
1.0
3.0
3600
3000
60
Product Marking
Part number
D
P
G
10
P
400
PJ
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Phase leg
Reverse Voltage [V]
ISOPLUS220AB (3)
UL listed
Logo
IXYS
Ayyww
abcd
®
ISOPLUS®
Part No.
Assembly Line
Date Code
Assembly Code
XXXXXXXXX
Ordering
Standard
Part Number
DPG10P400PJ
Marking on Product
DPG10P400PJ
Delivery Mode
Tube
Quantity
50
Code No.
507202
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
0.78
16.2
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG10P400PJ
Outlines ISOPLUS220
E
A
A2
E1
D2
Dim.
1
2
3
L1
2x b2
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
T°
W
Millimeters
min
max
4.00
5.00
2.50
3.00
1.60
1.80
0.90
1.30
2.35
2.55
1.25
1.65
0.70
1.00
15.00
16.00
12.00
13.00
1.10
1.50
14.90
15.50
10.00
11.00
7.50
8.50
2.54 BSC
13.00
14.50
3.00
3.50
42.5
47.5
-
0.1
Inches
min
max
0.157
0.197
0.098
0.118
0.063
0.071
0.035
0.051
0.093
0.100
0.049
0.065
0.028
0.039
0.591
0.630
0.472
0.512
0.043
0.059
0.587
0.610
0.394
0.433
0.295
0.335
0.100 BSC
0.512
0.571
0.118
0.138
-
0.004
L
D3
D
D1
b4
T
3x b
2x e
c
A1
W
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-273
gemäß JEDEC außer D und D1
.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-273 except D and D1
.
1
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
DPG10P400PJ
Fast Diode
80
70
60
0.3
0.4
T
VJ
= 125°C
V
R
= 270 V
15 A
10
30 A
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
12
I
F
[A]
50
40
30 T
VJ
= 25°C
150°C
20
10
0
0.0
Q
rr
0.2
7.5 A
I
RM
8
[A]
[μC]
0.1
6
T
VJ
= 125°C
V
R
= 270 V
4
0.0
0.5
1.0
1.5
2.0
2.5
0
100 200 300 400 500 600
2
0
100 200 300 400 500 600
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
1.4
1.2
100
1.0
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
120
T
VJ
= 125°C
V
R
= 270 V
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
18
16
14
12
T
VJ
= 125°C
I
F
= 15 A
V
R
= 270 V
450
400
350
300
250
fr
200
0.8
t
rr
I
RM
80
V
FR
I
F
= 30 A
15 A
7.5 A
10
8
6
V
FR
t
fr
K
f
0.6
0.4
0.2
0.0
0
[ns]
t
60
[V]
[ns]
150
100
50
Q
rr
40
4
2
0
0
20
40
80
120
160
0
100 200 300 400 500 600
0
100 200 300 400 500 600
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
25
T
VJ
= 125°C
V
R
= 270 V
20
I
F
= 30 A
I
F
= 15 A
I
F
= 7.5 A
2.0
2.5
-di
F
/dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
E
rec
15
[μJ]
10
Z
thJC
1.5
[K/W]
1.0
5
0.5
0
0
100 200 300 400 500 600
0.0
1
10
100
1000
10000
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
IXYS reserves the right to change limits, conditions and dimensions.
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
© 2013 IXYS all rights reserved
Embedded System
京公网安备 11010802033920号
EEWORLD
