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BC857B

Description
Bipolar Transistors - BJT PNP General Purpose
CategoryDiscrete semiconductor    The transistor   
File Size62KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BC857B Overview

Bipolar Transistors - BJT PNP General Purpose

BC857B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)220
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
®
BC857B
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type
BC857B
s
Marking
3F
s
s
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTOR
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPE IS
BC847B
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
I
C
I
CM
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Total Dissipation at T
C
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Collector-Emitter Voltage (I
B
= 0)
V
EBO
APPLICATIONS
s
WELL SUITABLE FOR PORTABLE
EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
b
O
so
te
le
ro
P
SOT-23
uc
d
s)
t(
INTERNAL SCHEMATIC DIAGRAM
P
e
od
r
s)
t(
uc
Value
-50
-45
-5
-100
-200
250
-65 to 150
150
Unit
V
V
V
mA
mA
mW
o
o
C
C
June 2002
1/4
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