MMSTA13/MMSTA14
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMSTA63/MMSTA64)
Ideal for Low Power Amplification and Switching
High Current Gain
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
SOT-323
A
C
Dim
A
B C
Min
0.25
1.15
2.00
0.30
1.20
1.80
0.0
0.90
0.25
0.10
Max
0.40
1.35
2.20
0.40
1.40
2.20
0.10
1.00
0.40
0.18
B
C
D
E
G
H
M
B
G
H
E
0.65 Nominal
Mechanical Data
•
•
•
•
•
•
•
•
•
•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
MMSTA13 Marking K2D, K3D, See Page 3
MMSTA14 Marking K3D, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
K
J
K
L
M
J
D
E
L
0°
8°
α
All Dimensions in mm
C
B
E
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
30
30
10
300
200
625
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes: 1.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30165 Rev. 9 - 2
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www.diodes.com
MMSTA13/MMSTA14
© Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CEO
I
CBO
I
EBO
MMSTA13
MMSTA14
MMSTA13
MMSTA14
Min
30
⎯
⎯
5,000
10,000
10,000
20,000
⎯
⎯
Max
⎯
100
100
Unit
V
nA
nA
Test Condition
I
C
= 100μA V
BE
= 0V
V
CB
= 30V, I
E
= 0
V
EB
= 10V, I
C
= 0
I
C
= 10mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, V
CE
= 5.0V
I
C
= 100mA, I
B
= 100μA
I
C
= 100mA, V
CE
= 5.0V
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
h
FE
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
f
T
⎯
1.5
2.0
⎯
V
V
pF
pF
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Note:
5. Short duration pulse test used to minimize self-heating effect.
8.0 Typical
15 Typical
125
⎯
200
1.10
1.05
V
CE(SAT)
, COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
0
25
50
75
100
125
150
175
200
T
A
= 150°C
T
A
= 25°C
I
C
= 1000
I
B
T
A
= -50°C
P
D
, POWER DISSIPATION (mW)
150
100
50
0
1
10
100
1,000
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
1,000,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1.6
1.5
V
BE(ON)
, BASE EMITTER VOLTAGE (V)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
T
A
= 150°C
T
A
= 25°C
V
CE
= 5V
T
A
= -50°C
h
FE
, DC CURRENT GAIN
100,000
10,000
1,000
100
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
DS30165 Rev. 9 - 2
2 of 3
www.diodes.com
MMSTA13/MMSTA14
© Diodes Incorporated
1,000
V
CE
= 5V
f
T
, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1
1
100
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs. Collector Current
Ordering Information
Device
MMSTA13-7-F
MMSTA14-7-F
Notes:
(Note 4 & 6)
Packaging
SOT-323
SOT-323
Shipping
3000/Tape & Reel
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
KxD
KxD = Product Type Marking Code, e.g., K2D = MMSTA13
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
YM
2000
L
Jan
1
2001
M
Feb
2
2002
N
Mar
3
2003
P
Apr
4
2004
R
May
5
2005
S
Jun
6
2006
T
2007
U
Jul
7
2008
V
Aug
8
2009
W
Sep
9
2010
X
Oct
O
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30165 Rev. 9 - 2
3 of 3
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MMSTA13/MMSTA14
© Diodes Incorporated
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