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BLF8G27LS-150GVQ

Description
RF MOSFET Transistors Power LDMOS transistor
Categorysemiconductor    Discrete semiconductor   
File Size1MB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF8G27LS-150GVQ Overview

RF MOSFET Transistors Power LDMOS transistor

BLF8G27LS-150GVQ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Id - Continuous Drain Current1.3 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance60 mOhms
TechnologySi
Gain18 dB
Maximum Operating Temperature+ 225 C
Mounting StyleSMD/SMT
Package / CaseSOT-1244C-7
PackagingTube
ConfigurationSingle
Operating Frequency2500 MHz to 2700 MHz
TypeRF Power MOSFET
Forward Transconductance - Min16 S
Factory Pack Quantity96
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V
BLF8G27LS-150V;
BLF8G27LS-150GV
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
150W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2600 to 2700
I
Dq
(mA)
1300
V
DS
(V)
28
P
L(AV)
(W)
45
G
p
(dB)
18
D
(%)
30
ACPR
5M
(dBc)
30
[1]
3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (60 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range

BLF8G27LS-150GVQ Related Products

BLF8G27LS-150GVQ BLF8G27LS-150VU
Description RF MOSFET Transistors Power LDMOS transistor RF MOSFET Transistors Power LDMOS transistor
Product Attribute Attribute Value Attribute Value
Manufacturer NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS Details Details
Id - Continuous Drain Current 1.3 A 1.3 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Rds On - Drain-Source Resistance 60 mOhms 60 mOhms
Technology Si Si
Gain 18 dB 18 dB
Maximum Operating Temperature + 225 C + 225 C
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-1244C-7 SOT-1244B-7
Packaging Tube Tube
Configuration Single Single
Operating Frequency 2500 MHz to 2700 MHz 2500 MHz to 2700 MHz
Type RF Power MOSFET RF Power MOSFET
Forward Transconductance - Min 16 S 16 S
Factory Pack Quantity 96 60
Vgs - Gate-Source Voltage 13 V 13 V
Vgs th - Gate-Source Threshold Voltage 1.9 V 1.9 V
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