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DSC5G0200L

Description
Bipolar Transistors - BJT SM SIG TRANS FLT LD 2.0x2.1mm
Categorysemiconductor    Discrete semiconductor   
File Size763KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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Bipolar Transistors - BJT SM SIG TRANS FLT LD 2.0x2.1mm

DSC5G0200L Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerPanasonic
Product CategoryBipolar Transistors - BJT
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSMini3-F2-B
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max20 V
Gain Bandwidth Product fT650 MHz
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Continuous Collector Current15 mA
DC Collector/Base Gain hfe Min65
Factory Pack Quantity3000
DSC5G02
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC2G02 in SMini3 type package
Features
High transition frequency f
T
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C5
Packaging
DSC5G02×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
opr
T
stg
Rating
30
20
3
15
150
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
SMini3-F2-B
SC-85
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
*1
Transition frequency
Reverse transfer capacitance
(Common emitter)
Power gain
Noise figure
2. *
1: Rank classification
Code
Rank
h
FE
Marking Symbol
C
C
65 to 160
C5C
D
D
100 to 260
C5D
0
No-rank
65 to 260
C5
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
PG
NF
Conditions
I
C
= 10
mA,
I
E
= 0
I
E
= 10
mA,
I
C
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA , f = 10.7 MHz
V
CE
= 6 V, I
C
= 1 mA , f = 100 MHz
V
CE
= 6 V, I
C
= 1 mA , f = 100 MHz
Min
30
3
Typ
Max
Unit
V
V
0.72
65
450
650
0.6
24
3.3
260
V
MHz
pF
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2014
Ver. CED
1

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Description Bipolar Transistors - BJT SM SIG TRANS FLT LD 2.0x2.1mm RF Bipolar Transistors Small Sig Transistor 2.0x2.1mm Flat lead
Product Attribute Attribute Value Attribute Value
Manufacturer Panasonic Panasonic
Product Category Bipolar Transistors - BJT RF Bipolar Transistors
RoHS Details Details
Factory Pack Quantity 3000 3000
Packaging Reel Reel
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