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SKM145GAL124DN

Description
Low Loss IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size644KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric View All

SKM145GAL124DN Overview

Low Loss IGBT Modules

SKM145GAL124DN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-204
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts2
Manufacturer packaging codeCASE D 94
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)190 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
JESD-609 codee2
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)800 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)530 ns
Nominal on time (ton)160 ns
VCEsat-Max2.45 V
SKM 145GB124DN
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
TM
2N
Inverse diode
Low Loss IGBT Modules
SKM 145GB124DN
SKM 145GAL124DN
Freewheeling diode
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Features
Typical Applications
Inverse diode
FWD
Thermal characteristics
Mechanical data
GB
GAL
1
14-09-2005 RAA
© by SEMIKRON
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