®
BYT60P-400
BYT260PIV-400 / BYT261PIV-400
FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
trr (max)
FEATURES AND BENEFITS
n
n
n
n
K2
A2
A2
K1
2 x 60 A
400 V
1.4 V
50 ns
K1
A1
K2
BYT261PIV-400
BYT260PIV-400
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance < 5 nH
DESCRIPTION
These rectifier devices are suited for free-wheeling
function in converters and motor control circuits.
Packaged in ISOTOP or SOD93, they are
intended for use in Switch Mode Power Supplies.
bs
O
I
FRM
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Parameter
Repetitive peak reverse voltage
Repetitive peak forward current
RMS forward current
Average forward current
δ
= 0.5
tp=5
µs
F=1kHz
ISOTOP
SOD93
Tc = 70°C
Tc = 80°C
Surge non repetitive forward current
tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
ISOTOP
SOD93
ISOTOP
SOD93
600
550
- 40 to + 150
150
°C
°C
A
Value
400
1000
140
100
60
A
Unit
V
A
A
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
A1
ISOTOP
TM
(Plastic)
A
K
SOD93
(Plastic)
TM:
ISOTOP is a registered trademark of STMicroelectronics.
May 2000 - Ed: 4D
1/7
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
THERMAL RESISTANCES
Symbol
R
th(j-c)
Parameter
Junction to case
ISOTOP
SOD93
R
th(c)
Per diode
Total
Total
Coupling
Value
0.8
0.45
0.7
0.1
°C/W
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
V
F
*
I
R
**
Parameter
Forward voltage drop
Test Conditions
Tj = 25°C
Tj = 100°C
Reverse leakage cur-
rent
Tj = 25°C
Tj = 100°C
V
R
= V
RRM
I
F
= 60 A
Min.
Pulse test : * tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.0045 I
F2(RMS)
RECOVERY CHARACTERISTICS
(per diode)
Symbol
t
rr
O
bs
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
t
IRM
I
RM
Parameter
Maximu m r ev er se
r ecove ry t i m e
Maximu m r ev er se
r ecove ry cu r r en t
Turn-off overvoltage
coefficient
Test Conditions
dI
F
/dt = - 240 A/µs
dI
F
/dt = - 480 A/µs
dI
F
/dt = - 240 A/µs
dI
F
/dt = - 480 A/µs
V
CC
= 200 V
I
F
= 60 A
L
p
®
0.05
µH
Tj = 100°C
(see fig. 13)
Min. Typ. Max. Unit
75 ns
50
18
24
3.3
4
/
A
et
l
o
ro
P
e
Tj = 25°C
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
Typ.
s)
t(
Max.
1.5
1.4
60
6
Unit
V
µA
mA
Test Conditions
Min.
Typ.
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/µs
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
Max.
100
50
Unit
ns
C=
V
RP
V
CC
Tj = 100°C V
CC
= 120V
I
F
= I
F(AV)
dI
F
/dt = - 60A/µs
L
p
= 0.8µH
(see fig. 14)
2/7
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
Fig. 1:
Average forward power dissipation versus
average forward current (per diode, for
ISOTOP).
Fig. 2:
Peak current versus form factor (per diode,
for
ISOTOP).
PF(av)(W)
110
100
90
80
70
60
50
40
30
20
10
0
350
δ
= 0.2
δ
= 0.1
δ
=1
δ
= 0.05
δ
= 0.5
IM(A)
T
300
250
200
P=75W
δ
=tp/T
P=100W
tp
150
T
100
50
tp
P=50W
IF(av) (A)
0
10
20
30
40
50
δ
=tp/T
P=25W
60
70
80
0
0.0
δ
0.4
0.5
0.6
0.1
0.2
0.3
Fig. 3:
Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP).
IF(av)(A)
70
Rth(j-a)=Rth(j-c)
60
50
40
30
bs
O
450
400
350
300
250
200
150
100
I
M
50
0
1E-3
Fig. 4-1:
Non repetitive surge peak forward current
versus overload duration (SOD93).
et
l
o
ro
P
e
10
0
20
uc
d
T
s)
t(
tp
O
-
ISOTOP
so
b
SOD93
te
le
r
P
d
o
uc
0.7
s)
t(
0.8
0.9
1.0
Rth(j-a)=2.5°C/W
δ
=tp/T
Tamb(°C)
50
75
100
125
150
0
25
Fig. 4-2:
Non repetitive surge peak forward current
versus overload duration (per diode, for ISOTOP).
IM(A)
IM(A)
400
350
300
Tc=50°C
Tc=25°C
Tc=50°C
Tc=25°C
250
200
150
Tc=75°C
100
50
0
1E-3
Tc=75°C
I
M
t
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
δ
=0.5
t(s)
1E-2
1E-1
1E+0
3/7
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
Fig. 5-1:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode
for ISOTOP).
Fig. 5-2:
Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
K=[Zth(j-c)/Rth(j-c)]
1.0
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
δ
= 0.5
0.5
δ
= 0.5
δ
= 0.2
δ
= 0.2
δ
= 0.1
0.2
δ
= 0.1
T
0.2
Single pulse
Single pulse
tp(s)
0.1
1E-3
1E-2
1E-1
δ
=tp/T
tp
tp(s)
0.1
1E-3
1E-2
1E+0
1E-1
Fig. 6:
Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values, per diode for
ISOTOP).
IFM(A)
500
Typical values
Tj=100°C
100
Tj=25°C
10
Tj=100°C
1
0.0
bs
O
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
Fig. 8:
Recovery charges versus dI
F
/dt (per diode
for ISOTOP).
et
l
o
0.5
od
r
P
e
VFM(V)
1.5
1.0
uc
s)
t(
2.5
O
-
3.0
200
180
160
140
120
100
so
b
C(pF)
te
le
r
P
d
o
uc
δ
=tp/T
s)
t(
T
tp
1E+0
F=1MHz
Tj=25°C
80
60
1
VR(V)
10
100
200
2.0
Fig. 9:
Recovery current versus dI
F
/dt (per diode
for ISOTOP).
Qrr(µC)
IRM(A)
50
IF=IF(av)
90% confidence
Tj=100°C
IF=IF(av)
90% confidence
Tj=100°C
10
dIF/dt(A/µs)
20
50
100
200
500
1
10
dIF/dt(A/µs)
20
50
100
200
500
4/7
BYT60P-400 / BYT260PIV-400 / BYT261PIV-400
Fig. 10:
Transient peak forward voltage versus
dI
F
/dt (per diode for ISOTOP).
VFP(V)
30
25
20
15
10
5
0
dIF/dt(A/µs)
IF=IF(av)
90% confidence
Tj=100°C
Fig. 11:
Forward recovery time versus dI
F
/dt (per
diode for ISOTOP).
tfr(µs)
1.50
1.25
1.00
0.75
0.50
0.25
IF=IF(av)
90% confidence
Tj=100°C
0
100
200
300
400
500
0.00
dIF/dt(A/µs)
0
100
200
300
Fig. 12:
Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
1.50
1.25
1.00
0.75
bs
O
LC
Fig. 13:
Turn-off switching characteristics (without
serie inductance).
et
l
o
DUT
ro
P
e
IF
0.50
0.25
uc
d
0
s)
t(
O
-
75
so
b
te
le
r
P
d
o
uc
400
s)
t(
500
IRM
Qrr
Tj(°C)
50
100
125
150
25
Fig. 14:
Turn-off switching characteristics (with
serie inductance).
IF
DUT
diF/dt
VC C
VF
LC
LP
diF/dt
VCC
VF
VCC
IRM
VC C
tIRM
VRP
5/7
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