IXGP12N100A datasheet, PDF - EEWORLD Datasheet

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IXGP12N100A: DescriptionIGBT Transistors 24Amps 1000V; CategoryDiscrete semiconductor The transistor; File Size50KB，2 Pages; ManufacturerIXYS; Environmental Compliance

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IXGP12N100A Overview

IGBT Transistors 24Amps 1000V

IXGP12N100A Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
Other features	HIGH SPEED
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	1000 V
Configuration	SINGLE
Maximum landing time (tf)	700 ns
Gate emitter threshold voltage maximum	5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	POWER CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	900 ns
Nominal on time (ton)	100 ns
Base Number Matches	1

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IGBT

V

CES

I

C25

24 A

V

CE(sat)

3.5 V

4.0 V

IXGA/IXGP12N100

1000 V

IXGA/IXGP12N100A

1000 V

Preliminary Data Sheet

Symbol

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA

(RBSOA)

P

C

T

J

T

JM

T

stg

M

d

Weight

Test Conditions

T

J

= 25°C to 150°C

T

J

= 25°C to 150°C; R

GE

= 1 MW

Continuous

Transient

T

C

= 25°C

T

C

= 90°C

T

C

= 25°C, 1 ms

V

GE

= 15 V, T

VJ

= 125°C, R

G

= 150

W

Clamped inductive load, L = 300

mH

T

C

= 25°C

Maximum Ratings

1000

±20

±30

24

12

48

I

CM

= 24

@ 0.8 V

CES

100

-55 ... +150

150

-55 ... +150

W

°C

V

A

TO-220AB (IXGP)

G C

E

TO-263 (IXGA)

G

E

C (TAB)

Features

• International standard packages

JEDEC TO-220AB and TO-263AA

• Second generation HDMOS

TM

process

• Low V

CE(sat)

- for minimum on-state conduction

losses

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Easy to mount with one screw

• Reduces assembly time and cost

• High power density

95591A (3/97)

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4 Nm/lb.in.

0.55/5 Nm/lb.in.

4

300

g

°C

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Symbol

Test Conditions

(T

J

= 25°C, unless otherwise specified)

BV

CES

V

GE(th)

I

CES

I

C

= 3 mA, V

GE

= 0 V

I

C

= 250

mA,

V

GE

= V

GE

V

CE

= 0.8, V

CES

V

GE

= 0 V

I

GES

V

CE(sat)

V

CE

= 0 V, V

GE

=

±20

V

I

C

= I

CE90

, V

GE

= 15

12N100

12N100A

Min.

1000

2.5

T

J

= 25°C

T

J

= 125°C

Characteristic Values

Typ.

Max.

V

5.0

250

1

±100

3.5

4.0

V

mA

nA

V

IXYS reserves the right to change limits, test conditions, and dimensions.

1-2

IXGP12N100A Related Products

	IXGP12N100A	IXGA12N100
Description	IGBT Transistors 24Amps 1000V	IGBT Transistors 24Amps 1000V
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Parts packaging code	TO-220AB	D2PAK
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3
Reach Compliance Code	compliant	not_compliant
Other features	HIGH SPEED	HIGH SPEED
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	20 A	20 A
Collector-emitter maximum voltage	1000 V	1000 V
Configuration	SINGLE	SINGLE
Maximum landing time (tf)	700 ns	700 ns
Gate emitter threshold voltage maximum	5 V	5 V
Gate-emitter maximum voltage	20 V	20 V
JEDEC-95 code	TO-220AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	100 W	100 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	POWER CONTROL	POWER CONTROL
Transistor component materials	SILICON	SILICON
Nominal off time (toff)	900 ns	900 ns
Nominal on time (ton)	100 ns	100 ns

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