Ordering number : EN8586A
2SJ661
P-Channel Power MOSFET
–60V, –38A, 39m
Ω
, TO-262-3L/TO-263-2L
Features
•
•
http://onsemi.com
ON-resistance RDS(on)1=29.5m
Ω
(typ.)
4V drive
•
Input capacitance Ciss=4360pF (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
IDP
PD
PW≤10μs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
--60
±20
--38
--152
1.65
65
Unit
V
V
A
A
W
W
Continued on next page.
Package Dimensions
unit : mm (typ)
7537-001
2SJ661-1E
10.0
1.2
4.5
1.3
8.0
1.75
Package Dimensions
unit : mm (typ)
7535-001
2SJ661-DL-1E
10.0
4
1.2
4.5
1.3
8.0
1.75
7.9
5.3
1.35
7.9
0.9
3.0
3.0
1.4
9.2
13.4
9.2
5.3
0.254
1.47
1.27
13.08
0.8
0.5
2.54
1 2 3
2.4
1
2 3
1.27
0.8
2.54
2.4
0.5
2.54
2.54
TO-262-3L
0 to 0.25
1 : Gate
2 : Drain
3 : Source
1 : Gate
2 : Drain
3 : Source
4 : Drain
TO-263-2L
Product & Package Information
• Package : TO-262-3L
• JEITA, JEDEC : TO-262
• Minimum Packing Quantity : 50pcs./magazine
• Package : TO-263-2L
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 800pcs./reel
Marking
J661
LOT No.
Packing Type : DL
Electrical Connection
0.9
2, 4
3
DL
1
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/N1805QA MSIM TB-00001078 No.8586-1/9
2SJ661
Continued from preceding page.
Parameter
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
Tch
Tstg
EAS
IAV
Conditions
Ratings
150
--55 to +150
250
--38
Unit
°C
°C
mJ
A
Note :
*1
VDD=--30V, L=200
μ
H, IAV=-
-38A (Fig.1)
*2
L
≤
200
μ
H, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--38A, VGS=0V
VDS=--30V, VGS=--10V, ID=--38A
See Fig.2
VDS=--20V, f=1MHz
Conditions
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--19A
ID=--19A, VGS=--10V
ID=--19A, VGS=--4V
Ratings
min
-
-60
-
-1
±10
-
-1.2
18
31
29.5
40
4360
470
335
33
285
295
195
80
15
12
-
-1.0
--1.2
39
56
--2.6
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Fig.1 Avalanche Resistance Test Circuit
L
≥50Ω
RG
2SJ661
0V
--10V
50Ω
VDD
Fig.2 Switching Time Test Circuit
0V
--10V
VIN
VDD= --30V
VIN
PW=10μs
D.C.≤1%
G
D
ID= --19A
RL=1.58Ω
VOUT
2SJ661
P.G
50Ω
S
Ordering Information
Device
2SJ661-1E
2SJ661-DL-1E
Package
TO-262-3L
TO-263-2L
Shipping
50pcs./magazine
800pcs./reel
memo
Pb Free
No.8586-2/9
2SJ661
--80
--70
--60
--50
--40
--30
--20
--10
0
ID -- VDS
--6
V
Tc=25
°
C
--1
0V
--80
--70
--60
--50
--40
--30
--20
--10
0
ID -- VGS
--25
°
C
25
°
C
VDS=
--
10V
Drain Current, ID -- A
Drain Current, ID -- A
--4V
VGS= --3V
°
C
25
0
--0.5
--1.0
--1.5
--2.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
--2.5
Tc
=7
5
°
--2
5
°
C
C
--3.0
--3.5
Tc=
--4.0
--4.5
Drain-to-Source Voltage, VDS -- V
70
RDS(on) -- VGS
IT08748
70
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT08749
ID= --19A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
50
40
30
20
10
0
--2
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
60
50
40
30
20
10
0
--50
Tc=75
°
C
25
°
C
--25
°
C
V
= --4
, VGS
--19A
I D=
0V
= --1
VGS
9A,
= --1
ID
--3
--4
--5
--6
--7
--8
--9
--10
--25
0
25
50
75
100
125
Gate-to-Source Voltage, VGS -- V
100
|
y
fs
|
-- ID
IT08750
--100
7
5
3
2
Case Temperature, Tc --
°C
IS -- VSD
IT08751
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
3
2
VDS= --10V
VGS=0V
°
C
25
10
7
5
3
2
1.0
--0.1
Tc
C
5
°
--2
=
Source Current, IS -- A
--10
7
5
3
2
--1.0
7
5
3
2
°
C
75
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
1000
7
5 7 --100
IT08752
--0.1
7
5
3
2
--0.01
0
--0.3
Tc=7
5
°
C
25
°
C
--25
°
C
--0.6
--0.9
--1.2
SW Time -- ID
td(off)
Switching Time, SW Time -- ns
5
3
2
VDD= --30V
VGS= --10V
10000
7
5
Ciss, Coss, Crss -- VDS
Ciss
Diode Forward Voltage, VSD -- V
IT08753
f=1MHz
Ciss, Coss, Crss -- pF
3
2
tr
100
7
5
3
2
10
--0.1
1000
7
5
3
2
100
tf
Coss
Crss
td(on)
2
3
5 7 --1.0
2
3
5 7
--10
2
3
Drain Current, ID -- A
5 7 --100
IT08754
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
IT08755
No.8586-3/9
75
°
C
--5.0
150
--1.5
--30
2SJ661
--10
--9
VGS -- Qg
VDS= --30V
ID= --38A
Drain Current, ID -- A
3
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ASO
IDP= --152A(PW≤10μs)
Gate-to-Source Voltage, VGS -- V
10
ID= --38A
10
μ
s
--8
--7
--6
--5
--4
--3
--2
--1
0
0
10
20
30
40
50
60
70
80
0
μ
s
s
1m
n
s
io
m
10
0ms
erat
10
op
DC
Operation in
this area is
limited by RDS(on).
--0.1
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT16831
Total Gate Charge, Qg -- nC
2.0
PD -- Ta
IT08756
70
Drain-to-Source Voltage, VDS -- V
PD -- Tc
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
65
60
1.65
1.5
50
40
1.0
30
20
10
0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT08735
Case Temperature, Tc --
°C
IT08758
No.8586-4/9
2SJ661
Taping Specification
2SJ661-DL-1E
No.8586-5/9
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