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CMPA801B025F-TB

Description
RF Amplifier Test Board without GaN MMIC
CategoryTopical application    Wireless rf/communication   
File Size2MB,14 Pages
ManufacturerCree
Websitehttp://www.cree.com/
Environmental Compliance
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CMPA801B025F-TB Overview

RF Amplifier Test Board without GaN MMIC

CMPA801B025F-TB Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCree
Product CategoryRF Amplifier
RoHSDetails
Mounting StyleScrew
Package / Case-
TypePower Amplifier
TechnologyGaN
Operating Frequency8.5 GHz to 11 GHz
P1dB - Compression Point45.8 dBm
Gain16 dB
Operating Supply Voltage28 V
NF - Noise Figure-
Test Frequency-
OIP3 - Third Order Intercept-
Operating Supply Current1.2 A
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 130 C
PackagingBulk
Bandwidth-
Number of Channels1 Channel
Development Kit-
Input Return Loss- 6 dB
Isolation dB-
Pd - Power Dissipation77 W
Factory Pack Quantity2
Supply Voltage - Max-
Supply Voltage - Min-
CMPA801B025
25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC is available in
a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-
PN: CMPA801
B025F/ CMPA
801B025P
Package Type
: 440213 / 44
0216
factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Typical Performance Over 8.5-11.0 GHz
(T
C
= 25˚C)
Parameter
Output Power
1
Output Power
1
Power Added Efficiency
1
8.5 GHz
38.0
45.8
37.0
10.0 GHz
37.0
45.7
36.0
11.0 GHz
35.5
45.5
35.0
Units
W
dBm
%
Note
1
: Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty.
Features
Applications
017
Rev 4.0 – May 2
8.5 - 11.0 GHz Operation
37 W P
OUT
typical
16 dB Power Gain
36 % Typical PAE
50 Ohm internally matched
<0.1 dB Power droop
Marine Radar
Communications
Satellite Communication Uplink
Subject to change without notice.
www.cree.com/rf
1

CMPA801B025F-TB Related Products

CMPA801B025F-TB CMPA801B025F
Description RF Amplifier Test Board without GaN MMIC RF Amplifier GaN MMIC Power Amp 8.0-11.0GHz, 25 Watt
Product Attribute Attribute Value Attribute Value
Manufacturer Cree Cree
Product Category RF Amplifier RF Amplifier
RoHS Details Details
Mounting Style Screw Screw
Type Power Amplifier Power Amplifier
Technology GaN GaN
Operating Frequency 8.5 GHz to 11 GHz 8.5 GHz to 11 GHz
P1dB - Compression Point 45.8 dBm 45.8 dBm
Gain 16 dB 16 dB
Operating Supply Voltage 28 V 28 V
Operating Supply Current 1.2 A 1.2 A
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 130 C + 130 C
Packaging Bulk Tray
Number of Channels 1 Channel 1 Channel
Input Return Loss - 6 dB - 6 dB
Pd - Power Dissipation 77 W 77 W
Factory Pack Quantity 2 75
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