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BLF8G22LS-200GVJ

Description
RF MOSFET Transistors BLF8G22LS-200GV/ACC-6L/REEL 13
Categorysemiconductor    Discrete semiconductor   
File Size1MB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF8G22LS-200GVJ Overview

RF MOSFET Transistors BLF8G22LS-200GV/ACC-6L/REEL 13

BLF8G22LS-200GVJ Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
RoHSDetails
Id - Continuous Drain Current2 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance50 mOhms
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-1244C-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
TypeRF Power MOSFET
Factory Pack Quantity100
Vgs - Gate-Source Voltage13 V
BLF8G22LS-200V;
BLF8G22LS-200GV
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
2000
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
19.0
D
(%)
29
ACPR
5M
(dBc)
30
[1]
3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation
Decoupling leads to enable improved video bandwidth (80 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2110 MHz to
2170 MHz frequency range

BLF8G22LS-200GVJ Related Products

BLF8G22LS-200GVJ BLF8G22LS-200V118 BLF8G22LS-200V,112
Description RF MOSFET Transistors BLF8G22LS-200GV/ACC-6L/REEL 13 RF MOSFET Transistors 2.1GHz 65V 20dB RF MOSFET Transistors 2.1GHz 65V 20dB
Product Attribute Attribute Value Attribute Value Attribute Value
Manufacturer NXP NXP NXP
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors
RoHS Details Details Details
Id - Continuous Drain Current 2 A 2 A 2 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V 65 V
Rds On - Drain-Source Resistance 50 mOhms 50 mOhms 50 mOhms
Technology Si Si Si
Mounting Style SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-1244C-7 SOT-1244B-7 SOT-1244B-7
Type RF Power MOSFET RF Power MOSFET RF Power MOSFET
Factory Pack Quantity 100 100 60
Vgs - Gate-Source Voltage 13 V 13 V 13 V
Packaging Reel Reel Tube
Gain - 20 dB 20 dB
Output Power - 200 W 200 W
Operating Frequency - 2.1 GHz to 2.17 GHz 2.1 GHz to 2.17 GHz
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