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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
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FQP10N60C / FQPF10N60C
— N-Channel
QFET
®
MOSFET
November 2013
FQP10N60C / FQPF10N60C
N-Channel
QFET
®
MOSFET
600
V,
9.5
A,
730
mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology. This advanced technology has
been especially tailored to mini-mize on-state resistance,
provide superior switching perfor-mance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched
mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
Features
•
9.5
A, 600 V, R
DS(on)
=
730
mΩ (Max.)
@ V
GS
= 10 V,
I
D
=
4.75
A
• Low
Gate Charge
(Typ.
44
nC)
• Low Crss (Typ.
18
pF)
• 100%
Avalanche Tested
D
GD
S
TO-220
G
D
S
G
TO-220F
S
Absolute Maximum Ratings
T
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
C
= 25 C unless otherwise noted.
o
Parameter
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
FQP10N60C
9.5
5.7
38
FQPF10N60C
600
9.5 *
5.7 *
38 *
±
30
700
9.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
15.6
4.5
156
1.25
-55 to +150
300
50
0.4
W
W/°C
°C
°C
* Drain current limited by maximum junction temperature.
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