TN2640N3-P002 datasheet, PDF - EEWORLD Datasheet

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TN2640N3-P002: DescriptionMOSFET 400V 5Ohm; Categorysemiconductor Discrete semiconductor; File Size323KB，2 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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TN2640N3-P002 Overview

MOSFET 400V 5Ohm

TN2640N3-P002 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Microchip
Product Category	MOSFET
RoHS	N
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-92-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	400 V
Id - Continuous Drain Current	2 A
Rds On - Drain-Source Resistance	5 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	1 W
Channel Mode	Enhancement
Height	5.33 mm
Length	5.21 mm
Product	MOSFET Small Signal
Transistor Type	1 N-Channel
Type	FET
Width	4.19 mm
Fall Time	22 ns
Rise Time	15 ns
Factory Pack Quantity	2000
Typical Turn-Off Delay Time	20 ns
Typical Turn-On Delay Time	4 ns
Unit Weight	0.007760 oz

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Product

Summary

Sheet

Applications:

TN2640

N-Channel Enhancement-Mode DMOS FET

►

DC-DC converters

►

Solid state relays

►

Ultrasound pulsers

►

Telecom switches

►

Photo voltaic drivers

►

Analog switches

10V

90%

10%

(ON)

VDD

Pulse

Generator

OUTPUT

INPUT

(OFF)

d(OFF)

10%

90%

GEN

d(ON)

VDD

OUTPUT

10%

INPUT

D.U.T.

Switching Waveform and Test Circuit

3-Lead TO-252 (K4)

Product Overview:

TN2640K4 N-Channel Enhancement-Mode DMOS FET. The device features fast switching

speeds, low parasitic capacitances and a low gate threshold for ease of driving the FET.

It’s D-Pak package gives designers the flexibility to use the device in a wide range of power

switching and amplifying applications. It has a high breakdown voltage (400V), a low on-

resistance (5.0W) and a low input capacitance (225pF) for fast switching applications. Adding

these features into the D-Pak package increases the power dissipation capability to 2.5W in

small footprints utilizing surface mount technology. It’s low input and output leakage feature

improves standby power dissipation while minimizing signal attenuation.

8-Lead SOIC (LG)

Features:

Low threshold — 2.0V max.

High input impedance

Low input capacitance

Benefits:

Can be operated directly from logic level input signals.

Eliminates the need for a level translator.

Eliminates the need to supply DC current into the

gate.

Improves overall efficiency.

Maximizes switching speed to help improve overall

efficiency.

Improves overall efficiency

Maximizes efficiency, minimizes power dissipation.

Improves overall reliability.

Improves measurement accuracy. Minimizes signal

attenuation.

Increases the power dissipation capability for surface

mount technology to 2.5W.

3-Lead TO-92 (N3)

Fast switching speeds

Low on resistance

Free from secondary breakdown

compared to bipolar transistors

Low input and output leakage

Addition of D-Pak option

120711

TN2640N3-P002 Related Products

	TN2640N3-P002	TN2640N3-P014	TN2640N3-G	TN2640LG	TN2640N3-G P014
Description	MOSFET 400V 5Ohm	MOSFET 400V 5Ohm	MOSFET 400V 5Ohm	MOSFET 400V 5Ohm	MOSFET N-CH Enhancmnt Mode MOSFET
Configuration	Single	Single	SINGLE WITH BUILT-IN DIODE	Single Quad Drain	Single
Product Attribute	Attribute Value	Attribute Value	-	Attribute Value	-
Manufacturer	Microchip	Microchip	-	Microchip	-
Product Category	MOSFET	MOSFET	-	MOSFET	MOSFET
RoHS	N	N	-	N	-
Technology	Si	Si	-	Si	-
Mounting Style	Through Hole	Through Hole	-	SMD/SMT	-
Package / Case	TO-92-3	TO-92-3	-	SOIC-8	-
Number of Channels	1 Channel	1 Channel	-	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-	N-Channel	-
Vds - Drain-Source Breakdown Voltage	400 V	400 V	-	400 V	-
Id - Continuous Drain Current	2 A	2 A	-	260 mA	-
Rds On - Drain-Source Resistance	5 Ohms	5 Ohms	-	5 Ohms	-
Vgs - Gate-Source Voltage	20 V	20 V	-	20 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-	+ 150 C	-
Pd - Power Dissipation	1 W	1 W	-	1.3 W	-
Channel Mode	Enhancement	Enhancement	-	Enhancement	-
Height	5.33 mm	5.33 mm	-	1.65 mm	-
Length	5.21 mm	5.21 mm	-	4.9 mm	-
Product	MOSFET Small Signal	MOSFET Small Signal	-	MOSFET Small Signal	-
Transistor Type	1 N-Channel	1 N-Channel	-	1 N-Channel	-
Width	4.19 mm	4.19 mm	-	3.9 mm	-
Fall Time	22 ns	22 ns	-	15 ns	-
Rise Time	15 ns	15 ns	-	15 ns	15 ns
Factory Pack Quantity	2000	2000	-	2500	-
Typical Turn-Off Delay Time	20 ns	20 ns	-	20 ns	-
Typical Turn-On Delay Time	4 ns	4 ns	-	4 ns	-
Unit Weight	0.007760 oz	0.007760 oz	-	0.017870 oz	-

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