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BTS3134D

Description
Power Switch ICs - Power Distribution SMART LW SIDE PWR 42V 3.5A
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size223KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BTS3134D Overview

Power Switch ICs - Power Distribution SMART LW SIDE PWR 42V 3.5A

BTS3134D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-252
package instructionTO-252, SMSIP3H,.38,90TB
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Built-in protectionTRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Number of drives1
Interface integrated circuit typeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 codeR-PSSO-G2
JESD-609 codee3
length6.5 mm
Humidity sensitivity level1
Number of functions1
Number of terminals2
Output current flow directionSINK
Nominal output peak current3.5 A
Package body materialPLASTIC/EPOXY
encapsulated codeTO-252
Encapsulate equivalent codeSMSIP3H,.38,90TB
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
power supply12 V
Certification statusNot Qualified
Filter levelAEC-Q100
Maximum seat height2.5 mm
Nominal supply voltage12 V
surface mountYES
technologyMOS
Terminal surfaceTIN
Terminal formGULL WING
Terminal pitch2.28 mm
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Disconnect time100 µs
connection time100 µs
width6.22 mm
Base Number Matches1
Smart Low Side Power Switch
Power HITFET BTS 3134D
Features
·
Logic Level Input
·
Input Protection (ESD)
·
Thermal shutdown
Green product (RoHS compliant)
·
Overload protection
·
Short circuit protection
·
Overvoltage protection
·
Current limitation
·
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
50
3.5
3
V
A
J
m
P / PG-TO252-3-11
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
technology. Fully protected by embedded
V
bb
HITFET
Current
Limitation
In
Pin 1
Overvoltage-
Protection
Gate-Driving
Unit
Over-
temperature
Protection
ESD
Overload
Protection
Short circuit
Protection
Pin 3
Source
Datasheet
1

N channel vertical power FET in Smart SIPMOS
protection functions.
M
Drain
Pin 2 and 4 (TAB)
Rev. 1.3, 2006-12-22




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