STTH30L06C
Turbo 2 ultratfast high voltage rectifier
Datasheet - production data
A1
K
A2
Description
This device uses ST Turbo 2 600 V technology,
and is particularly suited as boost diode in
discontinuous or critical mode power factor
corrections.
It is also intended for use as a freewheeling diode
in power supplies and other power switching
applications.
Table 1: Device summary
A2
A2
A1
D²PAK
K
Symbol
I
F(AV)
V
RRM
V
F
(typ.)
t
rr
(max.)
Value
up to 2 x 20 A
600 V
0.95 V
55 ns
TO-247
K
A1
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduce switching and conduction losses
ECOPACK
®
2 compliant component for
D²PAK on demand
December 2016
DocID10761 Rev 2
1/12
www.st.com
This is information on a product in full production.
Characteristics
STTH30L06C
1
Characteristics
Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
Parameter
Repetitive peak reverse voltage
Forward rms current
T
C
= 140 °C
I
F(AV)
Average forward current δ = 0.5,
square wave
T
C
= 125 °C
T
C
= 120 °C
T
C
= 110 °C
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Table 3: Thermal parameters
Symbol
R
th(j-c)
R
th(c)
Junction to case
Coupling
Parameter
Per
diode
Total
Max. value
1.7
1.15
0.6
°C/W
Unit
°C/W
Per diode
Per device
Per diode
Per device
Value
600
30
15
30
20
40
130
-65 to +175
+175
A
°C
°C
A
Unit
V
A
t
p
= 10 ms sinusoidal
When the diodes 1 and 2 are used simultaneously:
ΔT
j (diode1)
= P
(diode1)
x R
th(j-c)
(per diode) + P
(diode2)
x R
th(c)
Table 4: Static electrical characteristics (per diode)
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
V
F
(2)
Forward voltage drop
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Notes:
(1)
Pulse
(2)
Min.
-
-
-
-
Typ.
Max.
15
Unit
µA
V
R
= V
RRM
40
400
1.55
I
F
= 15 A
0.95
1.2
1.76
V
I
F
= 30 A
1.15
1.45
test: t
p
= 5 ms, δ < 2%
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.94 x I
F(AV)
+ 0.017 x I
F2(RMS)
2/12
DocID10761 Rev 2
STTH30L06C
Table 5: Dynamic electrical characteristics (per diode)
Symbol
Parameter
Test conditions
I
F
= 0.5 A
I
R
= 1 A
I
rr
= 0.25 A
I
F
= 1 A
V
R
= 30 V
dl
F
/dt = 50 A/µs
I
F
= 15 A
V
R
= 400 V
dl
F
/dt = 100 A/µs
I
F
= 15 A
V
FR
= 1.1 x V
Fmax.
dl
F
/dt = 100 A/µs
Min.
-
Characteristics
Typ.
Max.
55
ns
-
60
85
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
T
j
= 125 °C
-
-
-
8.5
12
300
A
ns
V
T
j
= 25 °C
3.0
DocID10761 Rev 2
3/12
Characteristics
STTH30L06C
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average
forward current (per diode)
P(W)
24
22
20
18
16
Figure 2: Forward voltage drop versus forward
current (per diode)
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
δ= 1
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
T
I
F(AV)
(A)
δ
=tp/T
tp
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
Z
th(j-c)
/R
t h(j-c)
1.0
35
Figure 4: Peak reverse recovery current versus
dl
F
/dt (typical values, per diode)
I
RM
(A)
V
R
=400V
T
j
=125°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
T
0.2
Single pulse
30
25
I
F
=0.5 x I
F(AV)
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
20
15
10
5
0.1
t
p
(s)
1.E-02
1.E-01
δ
=tp/T
tp
1.E+00
dI
F
/dt(A/µs)
0
0.0
1.E-03
0
50
100
150
200
250
300
350
400
450
500
Figure 5: Reverse recovery time versus dl
F
/dt
(typical values, per diode)
t
rr
(ns)
800
V
R
=400V
T
j
=125°C
Figure 6: Reverse recovery charges versus dl
F
/dt
(typical values, per diode)
Q
rr
(nC)
1800
700
600
500
400
I
F
= I
F(AV)
I
F
=2 x I
F(AV)
1600
1400
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
1200
I
F
= I
F(AV)
1000
800
I
F
=0.5 x I
F(AV)
I
F
=0.5 x I
F(AV)
300
200
100
600
400
200
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
4/12
DocID10761 Rev 2
STTH30L06C
Figure 7: Reverse recovery softness factor versus
dl
F
/dt (typical values, per diode)
SQ
rr
(nC)
factor
1.6
1800
Characteristics
Figure 8: Relative variation of dynamic parameters
versus junction temperature
1600
1.4
1400
1.2
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
I
F
< 2 x I
F(AV)
V
R
=400V
T
j
=125°C
1200
1.0
1000
0.8
800
0.6
600
0.4
400
0.2
200
0.0 0
00
50
100
100
150
200
200
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
dI
F
/dt(A/µs)
250
300
300
350
400
400
450
500
Figure 9: Transient peak forward voltage versus
dl
F
/dt (typical values, per diode)
V
FP
(V)
12
11
I
F
=I
F(AV)
T
j
=125°C
Figure 10: Forward recovery time versus dl
F
/dt
(typical values, per diode)
t
fr
(ns)
260
240
220
200
180
160
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
10
9
8
7
6
5
4
3
2
1
0
0
50
100
150
200
250
300
350
400
450
500
140
120
100
80
60
40
dI
F
/dt(A/µs)
20
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
Figure 11: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 12: Thermal resistance, junction to ambient,
versus copper surface under tab (D²PAK)
80
70
60
R
th(j-a)
(°C/W)
50
40
100
30
20
Epoxy printed board FR4, eCU= 35 µm
10
V
R
(V)
10
1
10
100
1000
S
Cu
(cm²)
0
0
5
10
15
20
25
30
35
40
DocID10761 Rev 2
5/12
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