LM285, LM385B
Micropower Voltage
Reference Diodes
The LM285/LM385 series are micropower two−terminal bandgap
voltage regulator diodes. Designed to operate over a wide current
range of 10
mA
to 20 mA, these devices feature exceptionally low
dynamic impedance, low noise and stable operation over time and
temperature. Tight voltage tolerances are achieved by on−chip
trimming. The large dynamic operating range enables these devices to
be used in applications with widely varying supplies with excellent
regulation. Extremely low operating current make these devices ideal
for micropower circuitry like portable instrumentation, regulators and
other analog circuitry where extended battery life is required.
The LM285/LM385 series are packaged in a low cost TO−226
plastic case and are available in two voltage versions of 1.235 V and
2.500 V as denoted by the device suffix (see Ordering Information
table). The LM285 is specified over a −40°C to +85°C temperature
range while the LM385 is rated from 0°C to +70°C.
The LM385 is also available in a surface mount plastic package in
voltages of 1.235 V and 2.500 V.
Features
www.onsemi.com
MARKING
DIAGRAMS
8
8
1
SOIC−8
D SUFFIX
CASE 751
1
y85−z
ALYW
G
•
•
•
•
•
•
Operating Current from 10
mA
to 20 mA
1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades
Low Temperature Coefficient
1.0
W
Dynamic Impedance
Surface Mount Package Available
These Devices are Pb−Free and are RoHS Compliant
Cathode
N.C.
Cathode
Anode
TO−92
(TO−226)
Z SUFFIX
CASE 29
LMy85
Z−xxx
ALYWG
G
xxx
= 1.2 or 2.5
y
= 2 or 3
z
= 1 or 2
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
360 k
Open
for 1.235 V
10 k
(Bottom View)
1
2
3
N.C.
N.C.
N.C.
Anode
1
2
3
4
8
7
6
5
Cathode
N.C.
N.C.
N.C.
600 k
8.45 k
Standard Application
74.3 k
Open
for 2.5 V
600 k
425 k
1.5 V
Battery
+
-
3.3 k
1.235 V
LM385−1.2
600 k
500
W
100 k
Anode
ORDERING INFORMATION
Figure 1. Representative Schematic Diagram
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
October, 2016 − Rev. 9
Publication Order Number:
LM285/D
LM285, LM385B
MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise noted)
Rating
Reverse Current
Forward Current
Operating Ambient Temperature Range
LM285
LM385
Operating Junction Temperature
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
T
J
T
stg
ESD
4000
400
2000
Symbol
I
R
I
F
T
A
−40 to +85
0 to +70
+150
−65 to + 150
°C
°C
V
Value
30
10
Unit
mA
mA
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise noted)
LM285−1.2
Characteristic
Reverse Breakdown Voltage (I
Rmin
v
I
R
v
20 mA)
LM285−1.2/LM385B−1.2
T
A
= T
low
to T
high
(Note 1)
LM385−1.2
T
A
= T
low
to T
high
(Note 1)
Minimum Operating Current
T
A
= 25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Breakdown Voltage Change with Current
I
Rmin
v
I
R
v
1.0 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
1.0 mA
v
I
R
v
20 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 1)
Reverse Dynamic Impedance
I
R
= 100
mA,
T
A
= +25°C
Average Temperature Coefficient
10
mA
v
I
R
v
20 mA, T
A
= T
low
to T
high
(Note 1)
Wideband Noise (RMS)
I
R
= 100
mA,
10 Hz
v
f
v
10 kHz
Long Term Stability
I
R
= 100
mA,
T
A
= +25°C
±
0.1°C
Reverse Breakdown Voltage (I
Rmin
v
I
R
v
20 mA)
LM285−2.5/LM385B−2.5
T
A
= T
low
to T
high
(Note 1)
LM385−2.5
T
A
= T
low
to T
high
(Note 1)
Minimum Operating Current
T
A
= 25°C
T
A
= T
low
to T
high
(Note 1)
1. T
low
T
high
T
low
T
high
Symbol
V
(BR)R
1.223
1.200
−
−
I
Rmin
−
−
DV
(BR)R
−
−
−
−
Z
−
DV
(BR)
/DT
n
−
S
−
V
(BR)R
2.462
2.415
−
−
I
Rmin
−
−
2.5
−
−
−
13
−
2.538
2.585
−
−
20
30
2.462
2.436
2.425
2.400
−
−
2.5
−
2.5
−
13
−
2.538
2.564
2.575
2.600
20
30
mA
20
−
−
20
−
V
60
−
−
60
−
ppm/kHR
−
0.6
80
−
−
−
−
0.6
80
−
ppm/°C
−
mV
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
1.0
1.5
20
25
W
8.0
−
10
20
−
8.0
−
15
20
mV
1.235
−
−
−
1.247
1.270
−
−
1.223
1.210
1.205
1.192
1.235
−
1.235
−
1.247
1.260
1.260
1.273
mA
Min
Typ
Max
LM385−1.2/LM385B−1.2
Min
Typ
Max
Unit
V
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
www.onsemi.com
2
LM285, LM385B
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise noted)
LM285−1.2
Characteristic
Reverse Breakdown Voltage Change with Current
I
Rmin
v
I
R
v
1.0 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 2)
1.0 mA
v
I
R
v
20 mA, T
A
= +25°C
T
A
= T
low
to T
high
(Note 2)
Reverse Dynamic Impedance
I
R
= 100
mA,
T
A
= +25°C
Average Temperature Coefficient
20
mA
v
I
R
v
20 mA, T
A
= T
low
to T
high
(Note 2)
Wideband Noise (RMS)
I
R
= 100
mA,
10 Hz
v
f
v
10 kHz
Long Term Stability
I
R
= 100
mA,
T
A
= +25°C
±
0.1°C
2. T
low
T
high
T
low
T
high
Symbol
DV
(BR)R
−
−
−
−
Z
−
DV
(BR)
/DT
−
n
−
S
−
20
−
−
20
−
120
−
−
120
−
ppm/kHR
80
−
−
80
−
mV
0.6
−
−
0.6
−
ppm/°C
−
−
−
−
1.0
1.5
10
20
−
−
−
−
−
−
−
−
2.0
2.5
20
25
W
Min
Typ
Max
LM385−1.2/LM385B−1.2
Min
Typ
Max
Unit
mV
= −40°C for LM285−1.2, LM285−2.5
= +85°C for LM285−1.2, LM285−2.5
= 0°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
= +70°C for LM385−1.2, LM385B−1.2, LM385−2.5, LM385B−2.5
www.onsemi.com
3
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−1.2/385−1.2/385B−1.2
100
IR, REVERSE CURRENT (
μ
A)
Δ
V(BR)R, REVERSE VOLTAGE CHANGE (mV)
10
8.0
6.0
+ 25°C
4.0
- 40°C
2.0
0
-2.0
0.01
0.1
1.0
10
I
R
, REVERSE CURRENT (mA)
100
T
A
= + 85°C
10
1.0
T
A
= + 85°C
+ 25°C
0.1
0
0.2
- 40°C
1.2
1.4
0.4
0.6
0.8
1.0
V(
BR)
, REVERSE VOLTAGE (V)
Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics
1.250
V(BR)R, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
1.2
1.0
T
A
= - 40°C
0.8
0.6
0.4
0.2
0
0.01
0.1
1.0
10
I
F
, FORWARD CURRENT (mA)
100
+ 25°C
+ 85°C
I
R
= 100
mA
1.240
1.230
1.220
1.210
-50
-25
0
25
50
75
T
A
, AMBIENT TEMPERATURE (°C)
100
125
Figure 4. Forward Characteristics
Figure 5. Temperature Drift
875
OUTPUT (V)
750
1.50
1.25
1.00
0.75
0.50
0.25
0
INPUT (V)
10
5.0
0
0
0.1
0.2
0.3
0.6 0.7
t, TIME (ms)
Input
100 k
Output
√
Hz)
e n , NOISE (nV/
625
500
375
250
125
0
10
100
1.0 K
f, FREQUENCY (Hz)
10 K
100 k
DUT
0.8
0.9
1.0
1.1
Figure 6. Noise Voltage
Figure 7. Response Time
www.onsemi.com
4
LM285, LM385B
TYPICAL PERFORMANCE CURVES FOR LM285−2.5/385−2.5/385B−2.5
100
IR, REVERSE CURRENT (
μ
A)
Δ
V(BR)R, REVERSE VOLTAGE CHANGE (mV)
10
8.0
6.0
+ 25°C
4.0
2.0
0
-2.0
0.01
0.1
1.0
10
I
R
, REVERSE CURRENT (mA)
100
- 40°C
T
A
= + 85°C
10
T
A
= + 85°C
+ 25°C
1.0
- 40°C
0.1
0
0.5
1.0
1.5
2.0
2.5
V(
BR)
, REVERSE VOLTAGE (V)
3.0
3.5
Figure 8. Reverse Characteristics
Figure 9. Reverse Characteristics
V(BR)R, REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
1.2
1.0
T
A
= - 40°C
0.8
0.6
0.4
0.2
0
0.01
0.1
+ 25°C
+ 85°C
2.520
2.510
2.500
2.490
2.480
2.470
2.460
2.450
-50
I
R
= 100
mA
1.0
10
I
F
, FORWARD CURRENT (mA)
100
-25
0
25
50
75
T
A
, AMBIENT TEMPERATURE (°C)
100
125
Figure 10. Forward Characteristics
Figure 11. Temperature Drift
3.00
2.50
OUTPUT (V)
1500
Input
√
Hz)
2.00
1.50
1.00
0.50
0
DUT
100 k
Output
1250
e n , NOISE (nV/
1000
750
INPUT (V)
10
100
1.0 K
f, FREQUENCY (Hz)
10 K
100 k
500
250
0
10
5.0
0
0
0.1
0.2
0.3
0.6 0.7
t, TIME (ms)
0.8
0.9
1.0
1.1
Figure 12. Noise Voltage
Figure 13. Response Time
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
