d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74398
S12-0335-Rev. C, 13-Feb-12
www.vishay.com
1
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
130
80
Maximum
170
100
Unit
°C/W
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1972DH
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1.2 A, V
GS
= 0 V
0.85
20
18
16
4
T
C
= 25 °C
1
4
1.2
40
36
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
r
V
DD
= 15 V, R
L
= 12.5
I
D
1.2 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 12.5
I
D
1.2 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.9
V
DS
= 15 V, V
GS
= 10 V, I
D
= 1.3 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 1.3 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
75
18
6
1.85
0.91
0.51
0.3
4.5
15
50
7
15
5
10
10
6
9
25
75
15
25
10
15
15
12
ns
2.8
1.4
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 1.3 A
V
GS
= 4.5 V, I
D
= 0.29 A
V
DS
= 15 V, I
D
= 1.3 A
4
0.155
0.278
1.4
0.225
0.340
1.5
30
23.5
- 4.6
2.8
± 100
1
10
V
mV/°C
V
ns
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74398
S12-0335-Rev. C, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1972DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4
V
GS
= 10
V
thru 5
V
0.8
I
D
- Drain C
u
rrent (A)
3
I
D
- Drain C
u
rrent (A)
T
C
= 125 °C
0.6
1.0
2
4
V
1
0.4
T
C
= 25 °C
T
C
= - 55 °C
0.2
3
V
0
0.0
0.0
0.4
0.8
1.2
1.6
V
DS
- Drain-to-Source
Voltage
(V)
2.0
0
1
2
3
V
GS
- Gate-to-Source
Voltage
(V)
4
Output Characteristics
0.6
100
Transfer Characteristics
0.5
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5
V
0.4
C - Capacitance (pF)
80
C
iss
60
0.3
40
C
oss
0.2
V
GS
= 10
V
0.1
20
C
rss
0.0
0
1
2
I
D
- Drain Current (A)
3
4
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (
N
ormalized)
I
D
= 1.3 A
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
1.8
Capacitance
V
GS
= 10
V
and 4.5
V,
I
D
= 1.3 A
1.6
1.4
6
V
DS
= 15
V
4
V
DS
= 24
V
1.2
1.0
2
0.8
0
0.0
0.5
1.0
1.5
2.0
0.6
- 50
- 25
Q
g
- Total Gate Charge (nC)
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74398
S12-0335-Rev. C, 13-Feb-12
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1972DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.6
I
D
= 1.3 A
0.5
R
DS(on)
- On-Resistance (Ω)
I
S
- So
u
rce C
u
rrent (A)
0.4
125 °C
0.3
T
J
= 150 °C
1
0.2
25 °C
0.1
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Forward Diode Voltage
2.6
2.5
2.4
2.3
Po
w
er (
W
)
V
GS(th)
(
V
)
2.2
2.1
2.0
1.9
1.8
1.7
1.6
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.01
1
I
D
= 250
µA
3
4
5
On-Resistance vs. Gate-Source Voltage
2
0.1
1
Time (s)
10
100
600
Threshold Voltage
10
Limited
by
R
DS(on)
*
Single Pulse Power
100
µs
I
D
- Drain C
u
rrent (A)
1
1 ms
10 ms
100 ms
BVDSS Limited
0.01
0.1
*
V
GS
1 s, 10 s
DC
0.1
T
A
= 25 °C
Single Pulse
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74398
S12-0335-Rev. C, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1972DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.4
1.4
1.2
Po
w
er Dissipation (
W
)
75
100
125
150
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
2.0
I
D
- Drain C
u
rrent (A)
1.6
Package Limited
1.2
0.8
0.4
0.0
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74398
S12-0335-Rev. C, 13-Feb-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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