®
BYT60P-1000
BYT261PIV-1000
FAST RECOVERY RECTIFIER DIODES
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
trr (max)
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance < 5 nH
DESCRIPTION
Dual or high single voltage rectifier devices suited
for Switch Mode Power Supplies and other power
converters.
These devices are packaged in ISOTOP or in
SOD93.
2 x 60 A
1000 V
1.8 V
70 ns
K2
A2
K1
A1
BYT261PIV-1000
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
FRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
b
O
so
te
le
Repetitive peak reverse voltage
Repetitive peak forward current
RMS forward current
Average forward current
δ
= 0.5
tp=5
µs
F=1kHz
ISOTOP
SOD93
Tc = 50°C
Tc = 60°C
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
ISOTOP
SOD93
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
ISOTOP
TM
(Plastic)
od
r
s)
t(
uc
A
K
SOD93
(Plastic)
Parameter
Value
1000
1000
140
100
60
60
400
- 40 to + 150
150
Unit
V
A
A
A
A
°C
°C
tp = 10 ms Sinusoidal
TM:
ISOTOP is a registered trademark of STMicroelectronics.
October 1999 - Ed: 4B
1/7
BYT60P-1000 / BYT261PIV-1000
THERMAL RESISTANCES
Symbol
R
th(j-c)
Parameter
Junction to case
ISOTOP
SOD93
R
th(c)
Per diode
Total
Total
Coupling
Value
0.8
0.45
0.7
0.1
°C/W
Unit
°C/W
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
V
F
*
I
R
**
Parameter
Forward voltage drop
Reverse leakage
current
Test Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
V
R
= V
RRM
I
F
= 60 A
Min.
Typ.
Max.
1.9
1.8
100
6
Unit
V
µA
Pulse test : * tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 1.47 x I
F(AV)
+ 0.005 I
F2(RMS)
RECOVERY CHARACTERISTICS
(per diode)
Symbol
t
rr
Test Conditions
Tj = 25°C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/µs
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
t
IRM
I
RM
Parameter
b
O
so
V
RP
V
CC
te
le
Maximum reverse
recovery time
Maximum reverse
recovery current
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
Min.
od
r
Typ.
s)
t(
uc
mA
Max.
170
70
Unit
ns
Test Conditions
dI
F
/dt = - 240 A/µs
dI
F
/dt = - 480 A/µs
dI
F
/dt = - 240 A/µs
dI
F
/dt = - 480 A/µs
V
CC
= 200 V
I
F
= 60 A
L
p
≤
0.05
µH
Tj = 100°C
(see fig. 13)
Min. Typ. Max. Unit
200 ns
120
40
44
3.3
4.5
/
A
C=
Turn-off overvoltage
coefficient
Tj = 100°C V
CC
= 200V
I
F
= I
F(AV)
dI
F
/dt = - 60A/µs
L
p
= 2.5µH
(see fig. 14)
2/7
BYT60P-1000 / BYT261PIV-1000
Fig. 1-1:
Average forward power dissipation
versus average forward current (per diode,
ISOTOP).
PF(av)(W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
δ
= 0.1
δ
= 0.05
δ
=1
δ
= 0.2
δ
= 0.5
Fig. 1-2:
Average forward power dissipation
versus average forward current (SOD93).
PF(av)(W)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
= 0.05
δ
=1
T
T
IF(av) (A)
0
10
20
30
40
50
δ
=tp/T
tp
IF(av) (A)
0
10
20
30
40
50
δ
=tp/T
tp
60
70
60
70
Fig. 2-1:
Peak current versus form factor (per
diode, ISOTOP).
Fig. 2-2:
Peak current versus form factor (SOD93).
IM(A)
500
450
400
350
300
250
200
150
100
50
0
0.0
T
IM(A)
500
450
400
350
300
250
200
150
100
50
0
0.0
P=70W
δ
=tp/T
tp
P=40W
P=100W
P=20W
0.1
δ
0.2
0.3
0.4
0.5
b
O
so
te
le
r
P
uc
od
0.6
0.7
0.8
s)
t(
0.9
bs
-O
1.0
et
l
o
P=70W
P
e
P=100W
od
r
s)
t(
uc
T
δ
=tp/T
tp
P=40W
P=20W
0.1
δ
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3:
Average forward current versus ambient
temperature (δ=0.5, per diode for ISOTOP).
IF(av)(A)
70
Rth(j-a)=Rth(j-c)
60
SOD93
50
40
30
20
10
0
0
δ
=tp/T
T
ISOTOP
Rth(j-a)=2.5°C/W
tp
Tamb(°C)
50
75
100
125
150
25
3/7
BYT60P-1000 / BYT261PIV-1000
Fig. 4-1:
Non repetitive surge peak forward current
versus overload duration (SOD93).
Fig. 4-2:
Non repetitive surge peak forward current
versus overload duration (per diode, ISOTOP).
IM(A)
400
350
300
250
200
150
100
50
0
1E-3
I
M
t
IM(A)
400
350
300
250
Tc=25°C
200
150
100
50
Tc=25°C
Tc=60°C
I
M
t
Tc=50°C
δ
=0.5
t(s)
1E-2
1E-1
1E+0
δ
=0.5
t(s)
1E-2
1E-1
1E+0
0
1E-3
Fig. 5-1:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode,
ISOTOP).
Fig. 5-2:
Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
K=[Zth(j-c)/Rth(j-c)]
1.0
1.0
K=[Zth(j-c)/Rth(j-c)]
0.5
δ
= 0.5
δ
= 0.2
0.2
δ
= 0.1
T
Single pulse
tp(s)
1E-2
1E-1
δ
=tp/T
0.1
1E-3
Fig. 6:
Forward voltage drop versus forward
current (maximum values, per diode for ISOTOP).
IFM(A)
b
O
100
10
500
so
te
le
r
P
uc
od
s)
t(
tp
bs
-O
δ
= 0.2
δ
= 0.1
0.5
δ
= 0.5
et
l
o
P
e
od
r
s)
t(
uc
0.2
T
Single pulse
tp(s)
1E-2
1E-1
δ
=tp/T
tp
1E+0
0.1
1E-3
1E+0
Fig. 7:
Junction capacitance versus reverse voltage
applied (typical values, per diode for ISOTOP).
C(pF)
100
F=1MHz
Tj=25°C
Typical values
Tj=100°C
80
60
Tj=25°C
Tj=100°C
40
20
1
0.0
VFM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VR(V)
0
1
10
100
200
4/7
BYT60P-1000 / BYT261PIV-1000
Fig. 8:
Recovery charges versus dI
F
/dt (per diode
for ISOTOP).
Fig. 9:
Recovery current versus dI
F
/dt (per diode
for ISOTOP).
Qrr(µC)
10
8
6
4
2
dIF/dt(A/µs)
0
10
20
50
100
200
500
IF=IF(av)
90% confidence
Tj=100°C
IRM(A)
80
70
60
50
40
30
20
10
0
10
20
dIF/dt(A/µs)
IF=IF(av)
90% confidence
Tj=100°C
50
100
200
500
Fig. 10:
Transient peak forward voltage versus
dI
F
/dt (per diode for ISOTOP).
Fig. 11:
Forward recovery time versus dI
F
/dt (per
diode for ISOTOP).
VFP(V)
45
40
35
30
25
20
15
10
5
0
1.50
IF=IF(av)
90% confidence
Tj=100°C
tfr(µs)
1.25
dIF/dt(A/µs)
0
100
200
O
so
b
te
le
r
P
uc
od
300
1.50
1.25
1.00
0.75
0.50
0.25
0
400
s)
t(
bs
-O
0.75
0.50
0.25
0.00
0
1.00
et
l
o
100
P
e
od
r
s)
t(
uc
IF=IF(av)
90% confidence
Tj=100°C
dIF/dt(A/µs)
500
200
300
400
500
Fig. 12:
Dynamic parameters versus junction
temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100°C]
IRM
Qrr
Tj(°C)
25
50
75
100
125
150
5/7
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