BSO080P03NS3 G
OptiMOS
3 P3-Power-Transistor
Features
• single P-Channel in SO8
• Qualified according JEDEC for target applications
1)
™
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-6 V
-30
8.0
11.4
-14.8
A
V
mW
• 150°C operating temperature
•
V
GS
=25 V, specially suited for notebook applications
• Pb-free plating; RoHS compliant
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
I
D
PG-DSO-8
Type
BSO080P03NS3 G
Package
PG-DSO-8
Marking
080P3NS
Lead free
Yes
Halogen free
Yes
Packing
non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
10 secs
Continuous drain current
1)
I
D
V
GS
=-10 V,
T
A
=25 °C
V
GS
=-10 V,
T
A
=70 °C
V
GS
=-6 V,
T
A
=25 °C
V
GS
=-6 V,
T
A
=70 °C
Unit
steady state
-12
-9.4
-9.8
-7.8
-48
149
±25
mJ
V
1.6
W
°C
A
-14.8
-11.8
-12.4
-9.9
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
I
D
=-14.8 A,
R
GS
=25
W
T
A
=25 °C
2.5
-55 ... 150
JESD22-A114 HBM
1C (1 kV - 2 kV)
260
55/150/56
°C
Rev. 2.21
page 1
2011-11-02
BSO080P03NS3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJS
minimal footprint,
t
p
≤10 s
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
t
p
≤10 s
6 cm
2
cooling area
1)
,
steady state
-
-
35
K/W
R
thJA
-
-
110
-
-
150
-
-
50
-
-
80
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=-0.25 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=-150 µA
V
DS
=-30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30 V,
V
GS
=0 V,
T
j
=125 °C
-30
-3.1
-
-2.5
-
-1.9
V
Zero gate voltage drain current
-
-
-1
µA
-
-
-
-
-
-
-
8.1
6.7
5.9
44
-100
-100
11.0
8.0
-
-
W
S
nA
mW
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
R
G
g
fs
V
GS
=-25 V,
V
DS
=0 V
V
GS
=-6 V,
I
D
=-12.4 A
V
GS
=-10 V,
I
D
=-14.8 A
Gate resistance
Transconductance
1)
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-14.8 A
22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev. 2.21
page 2
2011-11-02
BSO080P03NS3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=-14.8 A,
T
j
=25 °C
-
T
A
=25 °C
-
-
-
-
48
-1.1
V
-
3.4
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=-15 V,
V
GS
=0 V
V
DD
=-15 V,
I
D
=-14.8 A,
V
GS
=0 to -10 V
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15 V,
V
GS
=-
10 V,
I
D
=-14.8 A,
R
G
=1.6
W
V
GS
=0 V,
V
DS
=-15 V,
f
=1 MHz
-
-
-
-
-
-
-
4500
2100
150
16
47
64
19
6750
3150
225
24
70
96
28.5
pF
ns
-
-
-
-
-
-
-
18
7
8
18
61
3.9
49
23
10
11
25
81
-
65
nC
V
nC
Reverse recovery charge
Q
rr
t
rr
V
R
=-15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
48
-
nC
Reverse recovery time
4)
-
49
-
ns
See figure 16 for gate charge parameter definition
Rev. 2.21
page 3
2011-11-02
BSO080P03NS3 G
1 Power dissipation
P
tot
=f(T
A
);
t
p
≤10 s
2 Drain current
I
D
=f(T
A
);
t
p
≤10 s
parameter:
V
GS
3
16
2.5
12
2
6.0 V
P
tot
[W]
10 V
1.5
-I
D
[A]
0
40
80
120
160
8
1
4
0.5
0
0
0
40
80
T
A
[°C]
120
160
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
2)
;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
2)
parameter:
D
=t
p
/T
10
2
10
2
limited by on-state
resistance
10 µs
0.5
10
1
0.2
0.1
-I
D
[A]
1 ms
Z
thJA
[K/W]
100 µs
10
1
10 ms
10
0
0.05
0.02
0.01
10
0
100 ms
10 s
10
-1
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev. 2.21
page 4
2011-11-02
BSO080P03NS3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
60
10 V
6V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
15
14
13
4.5 V
4.5 V
12
11
5V
40
R
DS(on)
[mW]
10
9
8
7
6
5
4
10 V
6V
-I
D
[A]
4.2 V
20
4.0 V
3.5 V
0
0
1
2
3
3
0
10
20
30
40
50
60
-V
DS
[V]
-I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
60
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
60
50
50
40
40
30
g
fs
[S]
150 °C
25 °C
-I
D
[A]
30
20
20
10
10
0
0
1
2
3
4
5
6
0
0
10
20
30
40
-V
GS
[V]
-I
D
[A]
Rev. 2.21
page 5
2011-11-02
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