DB2U314
Silicon epitaxial planar type
For high speed switching circuits
DB27314 in USSMini2 type package
Features
Small reverse current I
R
Short reverse recovery time t
rr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 13
Packaging
DB2U31400L Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard)
1: Cathode
2: Anode
Rating
30
30
30
150
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
°C
°C
°C
V
R
V
RM
I
F
I
FM
T
j
T
opr
T
stg
Panasonic
JEITA
Code
USSMini2-F2-B
SC-116A
SOD-923
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 10 mA, I
rr
= 1 mA, R
L
= 100
Ω
1.5
1.0
Conditions
Min
Typ
Max
0.4
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
Ver. CED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
R
L
= 100
Ω
Pulse Generator
(PG-10N)
R
s
= 50
Ω
Publication date: April 2013
1
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semiconductors described in this book
(1)
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regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Consult our sales staff in advance for information on the following applications:
–
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