GS8170LW72AC-250I datasheet, PDF

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GS8170LW72AC-250I: Description18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM; Categorystorage storage; File Size754KB，32 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS8170LW72AC-250I Overview

18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM

GS8170LW72AC-250I Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA,
Contacts	209
Reach Compliance Code	compli
ECCN code	3A991.B.2.B
Maximum access time	2.1 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B209
length	22 mm
memory density	18874368 bi
Memory IC Type	STANDARD SRAM
memory width	72
Humidity sensitivity level	3
Number of functions	1
Number of terminals	209
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX72
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.7 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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GS8170LW36/72AC-350/333/300/250

209-Bump BGA

Commercial Temp

Industrial Temp

Features

• Late Write mode, Pipelined Read mode

• JEDEC-standard SigmaRAM

™

pinout and package

• 1.8 V +150/–100 mV core power supply

• 1.8 V CMOS Interface

• ZQ controlled user-selectable output drive strength

• Dual Cycle Deselect

• Burst Read and Write option

• Fully coherent read and write pipelines

• Echo Clock outputs track data output drivers

• Byte write operation (9-bit bytes)

• 2 user-programmable chip enable inputs

• IEEE 1149.1 JTAG-compliant Serial Boundary Scan

• 209-bump, 14 mm x 22 mm, 1 mm bump pitch BGA package

• Pin-compatible with future 36Mb, 72Mb, and 144Mb

devices

• Pb-Free 209-bump BGA package available

18Mb

1x1Lp CMOS I/O

Late Write SigmaRAM™

250 MHz–350 MHz

1.8 V V

1.8 V I/O

Bottom View

209-Bump, 14 mm x 22 mm BGA

1 mm Bump Pitch, 11 x 19 Bump Array

SigmaRAM Family Overview

GS8170LW36/72A SigmaRAMs are built in compliance with

the SigmaRAM pinout standard for synchronous SRAMs.

They are 18,874,368-bit (18Mb) SRAMs. This family of wide,

very low voltage CMOS I/O SRAMs is designed to operate at

the speeds needed to implement economical high performance

networking systems.

Functional Description

Because SigmaRAMs are synchronous devices, address data

inputs and read/write control inputs are captured on the rising

edge of the input clock. Write cycles are internally self-timed

and initiated by the rising edge of the clock input. This feature

eliminates complex off-chip write pulse generation required by

asynchronous SRAMs and simplifies input signal timing.

RAMs support pipelined reads utilizing a rising-edge-

triggered output register. They also utilize a Dual Cycle

Deselect (DCD) output deselect protocol.

RAMs are offered in a number of configurations including

Late Write, Double Late Write, and Double Data Rate (DDR).

The logical differences between the protocols employed by

these RAMs mainly involve various approaches to write

cueing and data transfer rates. The

ΣRAM

™

family standard

allows a user to implement the interface protocol best suited to

the task at hand.

RAMs are implemented with high performance CMOS

technology and are packaged in a 209-bump BGA.

Parameter Synopsis

Key Fast Bin Specs

Cycle Time

Access Time

Symbol

tKHKH

tKHQV

- 350

2.86 ns

1.7 ns

Rev: 1.04 4/2005

1/32

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8170LW72AC-250I Related Products

	GS8170LW72AC-250I	GS8170LW36AC	GS8170LW72AGC-350	GS8170LW72AGC-333	GS8170LW72AGC-300I	GS8170LW72AGC-250I	GS8170LW72AGC-300	GS8170LW72AGC-250
Description	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM	18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
Is it lead-free?	Contains lead	-	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	incompatible	-	conform to	conform to	conform to	conform to	conform to	conform to
Maker	GSI Technology	-	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology	GSI Technology
Parts packaging code	BGA	-	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LBGA,	-	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,	LBGA,
Contacts	209	-	209	209	209	209	209	209
Reach Compliance Code	compli	-	compli	compli	compli	compli	compli	compli
ECCN code	3A991.B.2.B	-	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	2.1 ns	-	1.6 ns	1.8 ns	1.8 ns	2.1 ns	1.8 ns	2.1 ns
Other features	PIPELINED ARCHITECTURE	-	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B209	-	R-PBGA-B209	R-PBGA-B209	R-PBGA-B209	R-PBGA-B209	R-PBGA-B209	R-PBGA-B209
length	22 mm	-	22 mm	22 mm	22 mm	22 mm	22 mm	22 mm
memory density	18874368 bi	-	18874368 bi	18874368 bi	18874368 bi	18874368 bi	18874368 bi	18874368 bi
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	72	-	72	72	72	72	72	72
Humidity sensitivity level	3	-	3	3	3	3	3	3
Number of functions	1	-	1	1	1	1	1	1
Number of terminals	209	-	209	209	209	209	209	209
word count	262144 words	-	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	-	256000	256000	256000	256000	256000	256000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	-	70 °C	70 °C	85 °C	85 °C	70 °C	70 °C
organize	256KX72	-	256KX72	256KX72	256KX72	256KX72	256KX72	256KX72
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	-	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	-	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	260	260	260	260	260	260
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.7 mm	-	1.7 mm	1.7 mm	1.7 mm	1.7 mm	1.7 mm	1.7 mm
Maximum supply voltage (Vsup)	1.95 V	-	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	-	YES	YES	YES	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	-	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	-	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1 mm	-	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	14 mm	-	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
JESD-609 code	-	-	e1	e1	e1	e1	e1	e1
Terminal surface	-	-	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)

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