• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MICRO FOOT
®
1.6 x 1.6
429x
8 x
x
1.6
Backside View
1
D
3
D
2
APPLICATIONS
• Low threshold load switch for
portable devices
- Low power consumption
G
1
G
S
- Increased battery life
• Ultra low voltage load switch
D
P-Channel MOSFET
Marking:
8429
Ordering Information:
Si8429DB-T1-E1 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
Maximum Power Dissipation
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditions
d
IR / convection
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
-8
±5
-11.7
-9.4
-7.8
b, c
-6.3
b, c
-25
-5.7
-2.5
b, c
6.25
4
2.77
b, c
1.77
b, c
-55 to +150
260
°C
W
A
UNIT
V
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Refer to IPC / JEDEC
®
(J-STD-020), no manual or hand soldering.
e. In this document, any reference to the case represents the body of the MICRO FOOT device and foot is the bump.
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Foot (Drain)
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 85 °C/W.
S15-1692-Rev. E, 20-Jul-15
Document Number: 74399
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
6
1.
m
m
mm
4
S
Bump
Side
View
SYMBOL
R
thJA
Steady state
R
thJF
TYP.
35
16
MAX.
45
20
UNIT
°C/W
Si8429DB
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
I
D
= -250 μA
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= V
GS
, I
D
= -5 mA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= -8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= -4.5 V
V
GS
= -4.5 V, I
D
= -1 A
V
GS
= -2.5 V, I
D
= -1 A
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
MIN.
-8
-
-
-0.35
-
-
-
-
-5
-
-
-
-
-
-
-
V
DS
= -4 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -4 V, V
GS
= -5 V, I
D
= -1 A
-
-
-
-
V
DS
= -4 V, V
GS
= -4.5 V, I
D
= 1 A
-
-
V
GS
= -0.1 V, f = 1 MHz
V
DD
= -4 V, R
L
= 4
I
D
-1 A, V
GEN
= -4.5 V, R
g
= 6
-
-
-
-
-
TYP.
-
-7.5
-2.2
-
-0.6
-
-
-
-
0.029
0.035
0.043
0.051
0.065
0.7
1640
590
380
24
21
1.8
3.7
22
12
25
260
155
MAX.
-
-
-
-0.8
-
± 100
-1
-10
-
0.035
0.042
0.052
0.069
0.098
1.2
-
-
-
26
32
-
-
-
20
40
390
240
ns
nC
pF
S
V
nA
μA
A
UNIT
V
mV/°C
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -1.8 V, I
D
= -1 A
V
GS
= -1.5 V, I
D
= -1 A
V
GS
= -1.2 V, I
D
= -1 A
Forward
Transconductance
a
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DS
= -4 V, I
D
= -1 A
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -1 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= -1 A, V
GS
= 0 V
T
C
= 25 °C
-
-
-
-
-
-
-
-
-
-0.7
150
150
57
93
-2.5
-25
-1.1
250
230
-
-
V
ns
nC
ns
A
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1692-Rev. E, 20-Jul-15
Document Number: 74399
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8429DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
V
GS
= 5 thru 2 V
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
20
25
Vishay Siliconix
15
1.5 V
15
10
10
T
C
= 125 °C
5
25 °C
- 55 °C
5
1V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.08
V
GS
= 1.2 V
2000
C - Capacitance (pF)
V
GS
= 1.5 V
0.06
V
GS
= 1.8 V
2500
Transfer Characteristics
R
DS(on)
- On-Resistance ( )
0.07
C
iss
1500
0.05
V
GS
= 2.5 V
0.04
V
GS
= 4.5 V
0.03
1000
C
oss
500
C
rss
0.02
0
5
10
15
20
25
0
0
1
2
3
4
5
6
7
8
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 4 V
I
D
= 1 A
R
DS(on)
- On-Resistance (Normalized)
1.3
Capacitance
V
GS
= 4.5 V, 2.5 V, 1.8 V, 1.5 V
I
D
= 1 A
1.2
4
3
1.1
2
1.0
1
0.9
0
0
5
10
15
20
25
0.8
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
S15-1692-Rev. E, 20-Jul-15
On-Resistance vs. Junction Temperature
Document Number: 74399
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8429DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
20
0.08
I
D
= 1 A
0.07
Vishay Siliconix
10
I
S
- Source Current (A)
0.06
T
A
= 125 °C
0.05
T
A
= 25 °C
0.04
T
J
= 150 °C
T
J
= 25 °C
0.03
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0.02
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8
80
On-Resistance vs. Gate-to-Source Voltage
0.7
I
D
= 250 µA
0.6
Power (W)
- 25
0
25
50
75
100
125
150
V
GS(th)
(V)
60
0.5
40
0.4
20
0.3
0.2
- 50
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
I
DM
Limited
10
I
D
- Drain Current (A)
P(t) = 0.0001
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 10
P(t) = 1
DC
T
A
= 25 °C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
0.1
Safe Operating Area, Junction-to-Ambient
S15-1692-Rev. E, 20-Jul-15
Document Number: 74399
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8429DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
12
Vishay Siliconix
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using
junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional
heatsinking is used. It is used to determine the current rating,
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?74399.
S15-1692-Rev. E, 20-Jul-15
Document Number: 74399
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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