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FZ400R12KE3B1

Description
IGBT Modules N-CH 1.2KV 650A
CategoryDiscrete semiconductor    The transistor   
File Size436KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IGBT Modules N-CH 1.2KV 650A

FZ400R12KE3B1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionFLANGE MOUNT, R-XUFM-X5
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time14 weeks
Shell connectionISOLATED
Maximum collector current (IC)650 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2250 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)830 ns
Nominal on time (ton)400 ns
VCEsat-Max2.15 V
Base Number Matches1
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ400R12KE3_B1
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
T
vj
= 25°C
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
t
P
= 1 ms
T
C
= 25°C, T
vj max
= 150

V
CES

1200
400
650
800
2250
+/-20
min.
T
vj
= 25°C
T
vj
= 125°C
V
CE sat
V
GEth
Q
G
R
Gint
C
ies
C
res
I
CES
I
GES
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
t
d on
5,0







typ.
1,70
2,00
5,8
3,70
1,9
28,0
1,10


0,25
0,30
0,09
0,10
0,55
0,65
0,13
0,18
max.
2,15
6,5




5,0
400

V
V
V
µC
nF
nF
mA
nA
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ

V

A
A
I
C nom

I
C
I
CRM
P
tot
V
GES




A

W

V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
Gate-Schwellenspannung
Gatethresholdvoltage
Gateladung
Gatecharge
InternerGatewiderstand
Internalgateresistor
Eingangskapazität
Inputcapacitance
Rückwirkungskapazität
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
Anstiegszeit,induktiveLast
Risetime,inductiveload
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
Fallzeit,induktiveLast
Falltime,inductiveload
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
Kurzschlußverhalten
SCdata
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
I
C
= 400 A, V
GE
= 15 V
I
C
= 400 A, V
GE
= 15 V
I
C
= 16,0 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE
= -15 V ... +15 V
T
vj
= 25°C
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
I
C
= 400 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 1,8
I
C
= 400 A, V
CE
= 600 V, L
S
= 85 nH
V
GE
= ±15 V
R
Gon
= 1,8
I
C
= 400 A, V
CE
= 600 V, L
S
= 85 nH
V
GE
= ±15 V
R
Goff
= 1,8
V
GE
15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
proIGBT/perIGBT

t
r


t
d off


t
f


E
on

33,0

E
off
I
SC
R
thJC
T
vj op



-40
59,0


t
P
10 µs, T
vj
= 125°C
1600


A
0,055 K/W
125
°C
preparedby:MM
approvedby:WR
dateofpublication:2013-10-02
revision:3.2
1

FZ400R12KE3B1 Related Products

FZ400R12KE3B1 FZ400R12KE3B1HOSA1
Description IGBT Modules N-CH 1.2KV 650A MOD IGBT MED PWR 62MM-2
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction FLANGE MOUNT, R-XUFM-X5 FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 650 A 650 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X5 R-XUFM-X5
Number of components 1 1
Number of terminals 5 5
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 830 ns 830 ns
Nominal on time (ton) 400 ns 400 ns
Base Number Matches 1 1
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