BLF7G22LS-160B,112 datasheet, PDF

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BLF7G22LS-160B,112: DescriptionRF MOSFET Transistors BLF7G22LS-160B/ACC-6L/TUBE-BUL; Categorysemiconductor Discrete semiconductor; File Size1MB，18 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLF7G22LS-160B,112 Overview

RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/TUBE-BUL

BLF7G22LS-160B,112 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	NXP
Product Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Id - Continuous Drain Current	36 A
Vds - Drain-Source Breakdown Voltage	65 V
Technology	Si
Gain	18 dB
Output Power	43 W
Maximum Operating Temperature	+ 150 C
Mounting Style	SMD/SMT
Package / Case	SOT-502B
Configuration	Single
Operating Frequency	2 GHz to 2.2 GHz
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	13 V
Vgs th - Gate-Source Threshold Voltage	1.9 V

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BLF7G22L-160;

BLF7G22LS-160

Power LDMOS transistor

Rev. 2.1 — 2 November 2011

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Mode of operation

2-carrier W-CDMA

[1]

(MHz)

2110 to 2170

(mA)

1300

(V)

L(AV)

(W)

(dB)

18.0



(%)

ACPR

(dBc)

32

[1]

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing 5 MHz.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low R

providing excellent thermal stability

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for W-CDMA base stations and multi carrier applications in the

2000 MHz to 2200 MHz frequency range

BLF7G22LS-160B,112 Related Products

	BLF7G22LS-160B,112	BLF7G22L-160B112	BLF7G22L-160B,118	BLF7G22LS-160B,118	934065232118	934065231112	934065231118
Description	RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/TUBE-BUL	RF MOSFET Transistors BLF7G22L-160B/ACC-6L/TUBE-BULK	RF MOSFET Transistors BLF7G22L-160B/ACC-6L/REEL13//	RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/REEL13//	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Configuration	Single	Single	Single	Single	SINGLE	SINGLE	SINGLE
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-	-	-
Manufacturer	NXP	NXP	NXP	NXP	-	-	-
Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors	-	-	-
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel	-	-	-
Id - Continuous Drain Current	36 A	36 A	36 A	36 A	-	-	-
Vds - Drain-Source Breakdown Voltage	65 V	65 V	65 V	65 V	-	-	-
Technology	Si	Si	Si	Si	-	-	-
Gain	18 dB	18 dB	18 dB	18 dB	-	-	-
Output Power	43 W	43 W	43 W	43 W	-	-	-
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C	-	-	-
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	-	-	-
Package / Case	SOT-502B	SOT-502A	SOT-502A	SOT-502B	-	-	-
Operating Frequency	2 GHz to 2.2 GHz	2 GHz to 2.2 GHz	2 GHz to 2.2 GHz	2 GHz to 2.2 GHz	-	-	-
Type	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET	-	-	-
Vgs - Gate-Source Voltage	13 V	13 V	13 V	13 V	-	-	-
Vgs th - Gate-Source Threshold Voltage	1.9 V	1.9 V	1.9 V	1.9 V	-	-	-

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