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BLF7G22LS-160B,112

Description
RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/TUBE-BUL
Categorysemiconductor    Discrete semiconductor   
File Size1MB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BLF7G22LS-160B,112 Overview

RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/TUBE-BUL

BLF7G22LS-160B,112 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryRF MOSFET Transistors
Transistor PolarityN-Channel
Id - Continuous Drain Current36 A
Vds - Drain-Source Breakdown Voltage65 V
TechnologySi
Gain18 dB
Output Power43 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-502B
ConfigurationSingle
Operating Frequency2 GHz to 2.2 GHz
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.9 V
BLF7G22L-160;
BLF7G22LS-160
Power LDMOS transistor
Rev. 2.1 — 2 November 2011
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1300
V
DS
(V)
28
P
L(AV)
(W)
43
G
p
(dB)
18.0
D
(%)
30
ACPR
(dBc)
32
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range

BLF7G22LS-160B,112 Related Products

BLF7G22LS-160B,112 BLF7G22L-160B112 BLF7G22L-160B,118 BLF7G22LS-160B,118 934065232118 934065231112 934065231118
Description RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/TUBE-BUL RF MOSFET Transistors BLF7G22L-160B/ACC-6L/TUBE-BULK RF MOSFET Transistors BLF7G22L-160B/ACC-6L/REEL13// RF MOSFET Transistors BLF7G22LS-160B/ACC-6L/REEL13// S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2 S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Configuration Single Single Single Single SINGLE SINGLE SINGLE
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value - - -
Manufacturer NXP NXP NXP NXP - - -
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors - - -
Transistor Polarity N-Channel N-Channel N-Channel N-Channel - - -
Id - Continuous Drain Current 36 A 36 A 36 A 36 A - - -
Vds - Drain-Source Breakdown Voltage 65 V 65 V 65 V 65 V - - -
Technology Si Si Si Si - - -
Gain 18 dB 18 dB 18 dB 18 dB - - -
Output Power 43 W 43 W 43 W 43 W - - -
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C - - -
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT - - -
Package / Case SOT-502B SOT-502A SOT-502A SOT-502B - - -
Operating Frequency 2 GHz to 2.2 GHz 2 GHz to 2.2 GHz 2 GHz to 2.2 GHz 2 GHz to 2.2 GHz - - -
Type RF Power MOSFET RF Power MOSFET RF Power MOSFET RF Power MOSFET - - -
Vgs - Gate-Source Voltage 13 V 13 V 13 V 13 V - - -
Vgs th - Gate-Source Threshold Voltage 1.9 V 1.9 V 1.9 V 1.9 V - - -
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