5
th
Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. A combination with a new, more compact design and thin-
wafer technology results is a new family of products showing improved efficiency
over all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
IDW20G65C5B
1
2
3
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2) 3)
Breakdown voltage tested at 9 mA
Optimized for high temperature operation
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
4)
Benefits
Applications
Table 1
Key Performance Parameters
Parameter
Value
Unit
V
DC
650
V
Q
C
;
V
R
=400V
2 x 15
nC
E
C
;
V
R
=400V
2 x 3.5
µJ
I
F
@ T
C
< 125°C
2 x 10
A
Table 2
Pin 1
A
Pin Definition
Pin 2
Pin 3
C
A
Package
PG-TO247-3
Type / ordering Code
IDW20G65C5B
Marking
D2065B5
Related links
www.infineon.com/sic
1)
2)
3)
4)
J-STD20 and JESD22
All devices tested under avalanche conditions for a time periode of 10ms
Per Leg
Per Device
Final Datasheet
2
Rev. 2.0, 2015-04-13
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW20G65C5B
Table of contents
Table of Contents
1
2
3
4
5
6
7
8
Description .......................................................................................................................................... 2
Maximum ratings ................................................................................................................................ 4
Thermal characteristics ..................................................................................................................... 4
Electrical characteristics ................................................................................................................... 5
Electrical characteristics diagrams .................................................................................................. 6
Simplified Forward Characteristics Model ...................................................................................... 8
Package outlines ................................................................................................................................ 9
Revision History ............................................................................................................................... 10
Final Datasheet
3
Rev. 2.00, 2015-04-13
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW20G65C5B
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
1)
Values
Typ.
–
–
–
–
–
–
–
–
–
–
50
–
–
–
–
–
–
–
–
–
-55
–
Max.
10
58
46
431
16.6
10.5
650
100
130
175
70
Unit
Note/Test Condition
T
C
< 125°C, D=1
Continuous forward current
I
F
Surge non-repetitive forward current, sine
I
F,SM
1)
halfwave
Non-repetitive peak forward current
i²t value
1)
1)
A
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
C
= 25°C,
t
p
=10 µs
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
j
= 25°C
V
R
=0..480 V
T
C
= 25°C
M3 screws
I
F,max
∫ i²dt
V
RRM
dv/dt
P
tot
T
j
;T
stg
A²s
V
V/ns
W
°C
Ncm
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Mounting torque
2)
Operating and storage temperature
3
Table 4
Parameter
Thermal characteristics
Thermal characteristics TO-247-3
Symbol
Min.
1)
1)
Values
–
–
–
Typ.
1.8
–
–
Max.
2.3
62
260
Unit
Note/Test Condition
Thermal resistance, junction-case
R
thJC
R
thJA
T
sold
Thermal resistance, junction-ambient
K/W
leaded
1.6mm (0.063 in.) from
case for 10 s
Soldering temperature, wavesoldering
only allowed at leads
°C
1)
2)
Per Leg
Per Device
Final Datasheet
4
Rev. 2.0, 2015-04-13
Embedded System
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