BLF6G21-10G
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
Table 1.
Typical performance
I
Dq
= 100 mA; T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
2110 to 2170
V
DS
(V)
28
28
P
L(AV)
(W)
0.7
2
G
p
(dB)
18.5
19.3
D
(%)
15
31
ACPR
(dBc)
50
[1]
39
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I
Dq
of 100 mA:
Average output power = 0.7 W
Gain = 18.5 dB
Efficiency = 15 %
ACPR =
50
dBc
Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an I
Dq
of 100 mA:
Average output power = 2 W
Gain = 19.3 dB
Efficiency = 31 %
ACPR =
39
dBc
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
BLF6G21-10G
Power LDMOS transistor
Excellent thermal stability
No internal matching for broadband operation
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multi carrier applications in the HF to 2200 MHz frequency range
Broadcast drivers
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
Graphic symbol
1
3
2
3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G21-10G
-
Description
ceramic surface-mounted package; 2 leads
Version
SOT538A
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
225
Unit
V
V
C
C
BLF6G21-10G#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
2 of 12
BLF6G21-10G
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Conditions
[1]
Symbol Parameter
Typ
3.2
Unit
K/W
R
th(j-case)
thermal resistance from junction to case T
case
= 80
C;
P
L(AV)
= 11 W
[1]
Thermal resistance is determined under specified RF operating conditions
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 18 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 0.9 A
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 0.625 A
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
Min
65
1.4
-
-
-
-
-
-
Typ
-
1.9
-
3.1
-
0.5
0.4
0.5
Max
-
2.4
1.5
-
150
-
-
-
Unit
V
V
A
A
nA
S
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 100 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
D
ACPR
Parameter
power gain
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 0.7 W
P
L(AV)
= 0.7 W
P
L(AV)
= 0.7 W
Min
-
-
-
Typ
18.5
15
50
Max
-
-
-
Unit
dB
%
dBc
Table 8.
Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2167.5 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 100 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test circuit.
Symbol
G
p
D
ACPR
Parameter
power gain
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 2 W
P
L(AV)
= 2 W
P
L(AV)
= 2 W
Min
17.3
29
-
Typ
19.3
31
39
Max
-
-
36
Unit
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G21-10G is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
f = 2140 MHz at P
L
= 10 W.
BLF6G21-10G#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 12
BLF6G21-10G
Power LDMOS transistor
7.2 CW
50
RL
in
(dB)
40
(1)
001aal120
30
20
(2)
10
(3)
0
0
4
8
12
P
L
(W)
16
V
DS
= 28 V; I
Dq
= 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 1.
CW input return loss as a function of load power; typical values
19.5
G
p
(dB)
18.5
001aal121
80
η
D
(%)
60
001aal122
(1)
(2)
(3)
40
17.5
(1)
(2)
(3)
20
16.5
0
4
8
12
P
L
(W)
16
0
0
4
8
12
P
L
(W)
16
V
DS
= 28 V; I
Dq
= 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
V
DS
= 28 V; I
Dq
= 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 2.
CW power gain as a function of load power;
typical values
Fig 3.
CW drain efficiency as a function of
load power; typical values
BLF6G21-10G#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 12
BLF6G21-10G
Power LDMOS transistor
7.3 1-carrier W-CDMA
50
RL
in
(dB)
40
(1)
001aal123
30
20
(2)
(3)
10
0
0
1
2
3
P
L
(W)
4
V
DS
= 28 V; I
Dq
= 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 4.
1-carrier W-CDMA input return loss as a function of load power; typical values
20.0
G
p
(dB)
19.6
001aal124
50
η
D
(%)
40
001aal125
19.2
30
(1)
(2)
(3)
18.8
(1)
(2)
(3)
20
18.4
10
18.0
0
1
2
3
P
L
(W)
4
0
0
1
2
3
P
L
(W)
4
V
DS
= 28 V; I
Dq
= 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
V
DS
= 28 V; I
Dq
= 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 5.
1-carrier W-CDMA power gain as a function of
load power; typical values
Fig 6.
1-carrier W-CDMA drain efficiency as a
function of load power; typical values
BLF6G21-10G#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 12
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