SI4562DY-E3 datasheet, PDF - EEWORLD Datasheet

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SI4562DY-E3: DescriptionMOSFET 20V 7.1/6.2A 2W; CategoryDiscrete semiconductor The transistor; File Size129KB，7 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SI4562DY-E3 Overview

MOSFET 20V 7.1/6.2A 2W

SI4562DY-E3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	,
Reach Compliance Code	compliant
Maximum drain current (Abs) (ID)	7.1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e3
Humidity sensitivity level	1
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	2 W
surface mount	YES
Terminal surface	Matte Tin (Sn)

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Si4562DY

Vishay Siliconix

N- and P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

(V)

N-Channel

DS(on)

(Ω)

0.025 at V

= 4.5 V

0.035 at V

= 2.5 V

0.033 at V

= - 4.5 V

0.050 at V

= - 2.5 V

(A)

7.1

6.0

- 6.2

- 5.0

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

Power MOSFET: 2.5 Rated

• Compliant to RoHS directive 2002/95/EC

P-Channel

- 20

SO-8

Top

View

P-Channel MOSFET

Ordering Information:

Si4562DY-T1-E3

(Lead (Pb)-free)

Si4562DY-T1-GE3

(Lead (Pb)-free and Halogen-free)

N-Channel

MOSFET

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

= 25 °C

= 70 °C

= 25 °C

= 70 °C

Symbol

, T

stg

N-Channel

± 12

7.1

5.7

1.7

2.0

1.3

- 55 to 150

- 6.2

- 4.9

- 40

- 1.7

P-Channel

- 20

Unit

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Notes:

a. Surface Mounted on FR4 board, t

≤

10 s.

Symbol

thJA

N- or P-Channel

62.5

Unit

°C/W

Document Number: 70717

S09-0867-Rev. C, 18-May-09

www.vishay.com

SI4562DY-E3 Related Products

	SI4562DY-E3	SI4562DY-T1-GE3
Description	MOSFET 20V 7.1/6.2A 2W	MOSFET 20V 7.1/6.2A 2.0W 25/33mohm @ 4.5V
Is it Rohs certified?	conform to	conform to
Maker	Vishay	Vishay
Reach Compliance Code	compliant	unknown
Maximum drain current (Abs) (ID)	7.1 A	7.1 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)	2 W	2 W
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	PURE MATTE TIN

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