DUAL NPN SWITCHING
TRANSISTORS
2N2369ADCSM
•
•
•
•
Dual Silicon Planer Epitaxial NPN Transistors
Hermetic Ceramic Surface Mount Package
Designed For High Speed Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VCES
VEBO
IC
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TSP = 125°C
Total Power Dissipation at
Derate Above 125°C
Junction Temperature Range
Storage Temperature Range
Each Side Total Device
40V
15V
40V
4.5V
200mA
360mW
500mW
2.06mW/°C 2.86mW/°C
360mW
500mW
4.80mW/°C 6.67mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJSP
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Solder Point
EachSide
486°C/W
208.3°C/W
Total Device
350°C/W
150°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 4140
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
DUAL NPN SWITCHING
TRANSISTORS
2N2369ADCSM
ELECTRICAL CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
ICES
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Cut-Off Current
Test Conditions
IC = 10mA
VCE = 20V
VCB = 40V
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
TA = 150°C
(2)
Min.
15
Typ
Max.
Units
V
0.4
10
0.2
30
10
0.25
30
40
30
40
20
20
120
0.2
0.3
0.25
0.45
0.7
0.59
1.02
0.9
0.8
1.2
0.85
V
120
120
120
ICBO
Collector-Cut-Off Current
VCB = 32V
VCB = 20V
VEB = 4.5V
VEB = 4V
VCE = 10V
IC = 10mA
IC = 30mA
µA
IEBO
Emitter-Cut-Off Current
IC = 0
IC = 0
VBE = -0.25V
TA = 125°C
VCE = 0.35V
VCE = 0.4V
VCE = 1.0V
TA = -55°C
ICEX
Collector Cut-Off Current
hFE
(1)
Forward-current transfer
ratio
IC = 10mA
IC = 100mA
IC = 10mA
VCE(sat)
(1)
VCE = 1.0V
IB = 1.0mA
TA = 125°C
Collector-Emitter Saturation
Voltage
IC = 30mA
IC = 100mA
IC = 10mA
IB = 3mA
IB = 10mA
IB = 1.0mA
TA = 125°C
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 30mA
IC = 100mA
TA = -55°C
IB = 3mA
IB = 10mA
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
(2) By design only, not a production test.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 4140
Issue 2
Page 2 of 3
DUAL NPN SWITCHING
TRANSISTORS
2N2369ADCSM
DYNAMIC CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols
| hfe |
Parameters
Small signal forward-current
transfer ratio
Output Capacitance
Test Conditions
IC = 10mA
f = 100MHz
VCB = 5V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
IC = 10mA
IC = 10mA
IB1 = 3mA
IC = 10mA
IB1 = 3mA
VCC = 3V
IB2 = -1.5mA
IB1 = IB2 = 10mA
VCC = 3V
IC = 0
IE = 0
VCE = 10V
Min.
5
Typ
Max.
10
Units
Cobo
Cibo
ts
ton
toff
4
pF
5
13
12
Input Capacitance
Storage Time
Turn-On Time
ns
Turn-Off Time
18
MECHANICAL DATA
Dimensions in mm (inches)
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.06
(0.025 ± 0.003)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
A
3
4
5
6
0.23 rad.
(0.009)
A = 1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
LCC2 (MO-041BB)
Underside View
Pad 1 – Collector 1
Pad 2 – Base 1
Pad 3 – Base 2
Pad 4 – Collector 2
Pad 5 – Emitter 2
Pad 6 – Emitter 1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 4140
Issue 2
Page 3 of 3
4.32 ± 0.13
(0.170 ± 0.005)
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