NTB5405N, NVB5405N
Power MOSFET
Features
40 V, 116 A, Single N−Channel, D
2
PAK
•
•
•
•
•
Low R
DS(on)
High Current Capability
Low Gate Charge
AEC−Q101 Qualified and PPAP Capable − NVB5405N
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V
(BR)DSS
40 V
R
DS(ON)
TYP
4.9 mΩ @ 10 V
I
D
MAX
(Note 1)
116 A
Applications
•
Electronic Brake Systems
•
Electronic Power Steering
•
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current − R
qJC
Power Dissipation −
R
qJC
Continuous Drain
Current − R
qJA
(Note 1)
Power Dissipation −
R
qJA
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
P
D
I
D
I
D
P
D
I
DM
T
J
,
T
STG
I
S
EAS
Symbol
V
DSS
V
GS
I
D
Value
40
±20
116
82
150
16.5
11.6
3.0
280
−55 to
175
75
800
W
A
W
A
1
2
3
D
2
PAK
Unit
V
V
A
G
N−Channel
D
S
MARKING
DIAGRAM
NTB5405NG
AYWW
CASE 418B
STYLE 2
1
NTB5405N
G
A
Y
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
t
p
= 10
ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (V
DD
= 50 V, V
GS
= 10 V, I
PK
= 40 A,
L = 1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
°
C
A
mJ
T
L
260
°C
ORDERING INFORMATION
Device
NTB5405NG
NTB5405NT4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping†
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient (Note 1)
Symbol
R
θJC
R
θJA
Max
1.0
50
Unit
°C/W
°C/W
NVB5405NT4G
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2011
1
October, 2011 − Rev. 5
Publication Order Number:
NTB5405N/D
NTB5405N, NVB5405N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 100°C
V
GS
= 0 V, I
D
= 250
mA
40
39
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±30
V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
1.5
−7.0
3.5
V
mV/°C
V
GS
= 10 V, I
D
= 40 A
V
GS
= 5.0 V, I
D
= 15 A
4.9
7.0
32
5.8
8.0
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
g
FS
V
GS
= 10 V, I
D
= 15 A
S
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 40 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 32 V
2700
700
300
88
3.25
9.5
37
4000
1400
600
pF
nC
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DD
= 32 V,
I
D
= 40 A, R
G
= 2.5
W
8.5
52
55
70
ns
SWITCHING CHARACTERISTICS, V
GS
= 5 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 5 V, V
DD
= 20 V,
I
D
= 20 A, R
G
= 2.5
W
19
153
32
42
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C
T
J
= 100°C
0.82
TBD
66
V
GS
= 0 V, dI
SD
/dt = 100 A/ms,
I
S
= 20 A
35
31
113
nC
ns
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
200
I
D,
DRAIN CURRENT (AMPS)
175
5.5 V
150
125
100
75
50
25
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4V
3.5 V
4.5 V
5V
V
GS
= 6 V to 10 V
T
J
= 25°C
I
D,
DRAIN CURRENT (AMPS)
125
V
DS
≥
10 V
100
75
50
T
J
= 125°C
25
0
0
T
J
= 25°C
T
J
= −55°C
1
2
3
5
6
7
4
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.01
I
D
= 40 A
T
J
= 25°C
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
15
25
Figure 2. Transfer Characteristics
T
J
= 25°C
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 5 V
V
GS
= 10 V
35
45
55
65
75
85
95
105 115
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
I
D
= 40 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 175°C
1000
100
T
J
= 100°C
−25
0
25
50
75
100
125
150
175
10
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
8000
V
DS
= 0 V V
GS
= 0 V
7000
C, CAPACITANCE (pF)
C
iss
6000
5000
4000
3000
2000
1000
0
10
C
rss
V
GS
0
V
DS
10
20
30
40
C
oss
C
rss
C
iss
T
J
= 25°C
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
12
10
V
DS
8
6
Q
GS
4
2
0
0
10
I
D
= 40 A
T
J
= 25°C
50
70
30
20
40
60
Q
G
, TOTAL GATE CHARGE (nC)
80
Q
GD
QT
V
GS
36
30
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
24
18
12
6
0
90
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 32 V
I
D
= 40 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
40
35
30
25
20
15
10
5
0
0.4
Figure 8. Gate−To−Source and
Drain−To−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
10
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0.5
0.7
0.6
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
1000
1 ms
I
D
, DRAIN CURRENT (A)
100
10 ms
dc
10
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
100
ms
10
ms
AVALANCHE ENERGY (mJ)
800
700
600
500
400
300
200
100
Figure 10. Diode Forward Voltage vs. Current
I
D
= 40 A
1
0.1
0
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
t, TIME (ms)
0.1
1.0
10
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
R
qJC
(t) = r(t) R
qJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC
(t)
Figure 13. Thermal Response
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
