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2SC1985

Description
Silicon NPN Triple Diffused Mesa
CategoryDiscrete semiconductor    The transistor   
File Size85KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric Compare View All

2SC1985 Overview

Silicon NPN Triple Diffused Mesa

2SC1985 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)6 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
Base Number Matches1

2SC1985 Related Products

2SC1985 2SC1986
Description Silicon NPN Triple Diffused Mesa Silicon NPN Triple Diffused Mesa
Is it Rohs certified? incompatible incompatible
Reach Compliance Code unknow unknow
Maximum collector current (IC) 6 A 6 A
Configuration Single Single
Minimum DC current gain (hFE) 40 40
JESD-609 code e0 e0
Maximum operating temperature 140 °C 140 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 40 W 40 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz
Base Number Matches 1 1
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