Am29LV128MH/L
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number
25270
Revision
C
Amendment
+2
Issue Date
September 9, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
DATASHEET
Am29LV128MH/L
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit
™
3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
™
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■
Single power supply operation
— 3 volt read, erase, and program operations
■
VersatileI/O
™
control
— Device generates data output voltages and tolerates
data input voltages on the CE# and DQ
inputs/outputs as determined by the voltage on the
V
IO
pin; operates from 1.65 to 3.6 V
■
Manufactured on 0.23 µm MirrorBit process
technology
■
SecSi
™
(Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■
Flexible sector architecture
— Two hundred fifty-six 32 Kword (64 Kbyte) sectors
■
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■
Minimum 100,000 erase cycle guarantee per sector
■
20-year data retention at 125
°
C
PERFORMANCE CHARACTERISTICS
■
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 s typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■
Low power consumption (typical values at 3.0 V, 5
MHz)
— 13 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■
Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: V
ID
-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
25270
Rev:
C
Amendment/2
Issue Date:
September 9, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
D A T A S H E E T
GENERAL DESCRIPTION
The Am29LV128MH/L is a 128 Mbit, 3.0 volt single
power supply flash memory devices organized as
8,388,608 words or 16,777,216 bytes. The device has
a 16-bit wide data bus that can also function as an
8-bit wide data bus by using the BYTE# input. The de-
vice can be programmed either in the host system or
in standard EPROM programmers.
An access time of 90, 100, 110, or 120 ns is available.
Note that each access time has a specific operating
voltage range (V
CC
) and an I/O voltage range (V
IO
), as
specified in the Product Selector Guide and the Order-
ing Information sections. The device is offered in a
56-pin TSOP, 64-ball Fortified BGA. Each device has
separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
Each device requires only a
single 3.0 volt power
supply
for both read and write functions. In addition to
a V
CC
input, a high-voltage
accelerated program
(WP#/ACC)
input provides shorter programming times
through increased current. This feature is intended to
facilitate factory throughput during system production,
but may also be used in the field if desired.
The device is entirely command set compatible with
the
JEDEC single-power-supply Flash standard.
Commands are written to the device using standard
microprocessor write timing. Write cycles also inter-
nally latch addresses and data needed for the pro-
gramming and erase operations.
The
sector erase architecture
allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through
command sequences. Once a program or erase oper-
ation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle)
status bits
or
monitor the
Ready/Busy# (RY/BY#)
output to deter-
mine whether the operation is complete. To facilitate
programming, an
Unlock Bypass
mode reduces com-
mand sequence overhead by requiring only two write
cycles to program data instead of four.
The
VersatileI/O™
(V
IO
) control allows the host sys-
tem to set the voltage levels that the device generates
and tolerates on the CE# control input and DQ I/Os to
the same voltage level that is asserted on the V
IO
pin.
Refer to the Ordering Information section for valid V
IO
options.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
group protection feature disables both program and
erase operations in any combination of sector groups
of memory. This can be achieved in-system or via pro-
gramming equipment.
The
Erase Suspend/Erase Resume
feature allows
the host system to pause an erase operation in a given
sector to read or program any other sector and then
complete the erase operation. The
Program Sus-
pend/Program Resume
feature enables the host sys-
tem to pause a program operation in a given sector to
read any other sector and then complete the program
operation.
The
hardware RESET# pin
terminates any operation
in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be
tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to
read boot-up firmware from the Flash memory device.
The device reduces power consumption in the
standby mode
when it detects specific voltage levels
on CE# and RESET#, or when addresses have been
stable for a specified period of time.
The
SecSi
™
(Secured Silicon) Sector
provides a
128-word/256-byte area for code or data that can be
permanently protected. Once this sector is protected,
no further changes within the sector can occur.
The
Write Protect (WP#/ACC)
feature protects the
first or last sector by asserting a logic low on the WP#
pin.
AMD MirrorBit flash technology combines years of
Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effec-
tiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The
data is programmed using hot electron injection.
RELATED DOCUMENTS
For a comprehensive information on MirrorBit prod-
ucts, including migration information, data sheets, ap-
plication notes, and software drivers, please see
www.amd.com
→
Flash Memory
→
Product Informa-
tion
→
MirrorBit
→
Flash Information
→
Technical Docu-
mentation. The following is a partial list of documents
closely related to this product:
MirrorBit™ Flash Memory Write Buffer Programming
and Page Buffer Read
Implementing a Common Layout for AMD MirrorBit
and Intel StrataFlash Memory Devices
Migrating from Single-byte to Three-byte Device IDs
Am29LV256M, 256 Mbit MirrorBit Flash device
(in 64-ball, 18 x 12 mm Fortified BGA package)
2
Am29LV128MH/L
September 9, 2003
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . .
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .
Device Bus Operations . . . . . . . . . . . . . . . . . . . . .
4
4
5
7
7
8
9
Erase Suspend/Erase Resume Commands ........................... 33
Command Definitions ............................................................. 34
Table 10. Command Definitions (x16 Mode, BYTE# = V
IH
) ........... 34
Table 11. Command Definitions (x8 Mode, BYTE# = V
IL
).............. 35
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 36
DQ7: Data# Polling ................................................................. 36
Figure 8. Data# Polling Algorithm .................................................. 36
Table 1. Device Bus Operations ....................................................... 9
Word/Byte Configuration .......................................................... 9
VersatileIO
™
(V
IO
) Control ....................................................... 9
Requirements for Reading Array Data ................................... 10
Page Mode Read ............................................................................10
RY/BY#: Ready/Busy# ............................................................ 37
DQ6: Toggle Bit I .................................................................... 37
Figure 9. Toggle Bit Algorithm ........................................................ 38
Writing Commands/Command Sequences ............................ 10
Write Buffer .....................................................................................10
Accelerated Program Operation ......................................................10
Autoselect Functions .......................................................................10
DQ2: Toggle Bit II ................................................................... 38
Reading Toggle Bits DQ6/DQ2 ............................................... 38
DQ5: Exceeded Timing Limits ................................................ 39
DQ3: Sector Erase Timer ....................................................... 39
DQ1: Write-to-Buffer Abort ..................................................... 39
Table 12. Write Operation Status................................................... 40
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 11
RESET#: Hardware Reset Pin ............................................... 11
Output Disable Mode .............................................................. 11
Table 2. Sector Address Table........................................................ 12
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 41
Figure 10. Maximum Negative Overshoot Waveform ................... 41
Figure 11. Maximum Positive Overshoot Waveform ..................... 41
Autoselect Mode ..................................................................... 18
Table 3. Autoselect Codes, (High Voltage Method) ....................... 18
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 41
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 12. Test Setup .................................................................... 43
Table 13. Test Specifications ......................................................... 43
Sector Group Protection and Unprotection ............................. 19
Table 4. Sector Group Protection/Unprotection Address Table ..... 19
Key to Switching Waveforms. . . . . . . . . . . . . . . . 43
Figure 13. Input Waveforms and Measurement Levels ................. 43
Write Protect (WP#) ................................................................ 20
Temporary Sector Group Unprotect ....................................... 20
Figure 1. Temporary Sector Group Unprotect Operation ................20
Figure 2. In-System Sector Group Protect/Unprotect Algorithms ...21
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 44
Read-Only Operations ........................................................... 44
Figure 14. Read Operation Timings ............................................... 44
Figure 15. Page Read Timings ...................................................... 45
SecSi (Secured Silicon) Sector Flash Memory Region .......... 22
Table 5. SecSi Sector Contents ...................................................... 22
Figure 3. SecSi Sector Protect Verify ..............................................23
Hardware Reset (RESET#) .................................................... 46
Figure 16. Reset Timings ............................................................... 46
Hardware Data Protection ...................................................... 23
Low VCC Write Inhibit .....................................................................23
Write Pulse “Glitch” Protection ........................................................23
Logical Inhibit ..................................................................................23
Power-Up Write Inhibit ....................................................................23
Erase and Program Operations .............................................. 47
Figure 17. Reset Timings ............................................................... 48
Figure 18. Program Operation Timings .......................................... 49
Figure 19. Accelerated Program Timing Diagram .......................... 49
Figure 20. Chip/Sector Erase Operation Timings .......................... 50
Figure 21. Data# Polling Timings (During Embedded Algorithms) . 51
Figure 22. Toggle Bit Timings (During Embedded Algorithms) ...... 52
Figure 23. DQ2 vs. DQ6 ................................................................. 52
Common Flash Memory Interface (CFI) . . . . . . . 23
Table 6. CFI Query Identification String ..........................................24
Table 7. System Interface String..................................................... 24
Table 8. Device Geometry Definition ..............................................25
Table 9. Primary Vendor-Specific Extended Query ........................26
Temporary Sector Group Unprotect ....................................... 53
Figure 24. Temporary Sector Group Unprotect Timing Diagram ... 53
Figure 25. Sector Group Protect and Unprotect Timing Diagram .. 54
Command Definitions . . . . . . . . . . . . . . . . . . . . . 27
Reading Array Data ................................................................ 27
Reset Command ..................................................................... 27
Autoselect Command Sequence ............................................ 27
Enter SecSi Sector/Exit SecSi Sector Command Sequence .. 28
Word/Byte Program Command Sequence ............................. 28
Unlock Bypass Command Sequence ..............................................28
Write Buffer Programming ...............................................................28
Accelerated Program ......................................................................29
Figure 4. Write Buffer Programming Operation ...............................30
Figure 5. Program Operation ..........................................................31
Alternate CE# Controlled Erase and Program Operations ..... 55
Figure 26. Alternate CE# Controlled Write (Erase/Program)
Operation Timings .......................................................................... 56
Program Suspend/Program Resume Command Sequence ... 31
Figure 6. Program Suspend/Program Resume ...............................32
Chip Erase Command Sequence ........................................... 32
Sector Erase Command Sequence ........................................ 32
Figure 7. Erase Operation ...............................................................33
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 56
Erase And Programming Performance. . . . . . . . 57
TSOP Pin and BGA Package Capacitance . . . . . 58
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 59
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline
Package (TSOP) ..................................................................... 59
LAA064—64-Ball Fortified Ball Grid Array
13 x 11 mm Package .............................................................. 60
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 61
September 9, 2003
Am29LV128MH/L
3
TI Technology Forum
京公网安备 11010802033920号
EEWORLD
