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EGL1F

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size130KB,2 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

EGL1F Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA

EGL1F Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, MINIMELF-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
surface mountYes
Terminal formWRAP AROUND
terminal coatingNOT SPECIFIED
Terminal locationEND
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage200 V
Maximum average forward current1 A
EGL 1A ... EGL 1G
Surface mount diode
Ultrafast silicon rectifier
diodes
EGL 1A ... EGL 1G
Forward Current: 1 A
Reverse Voltage: 50 to 400 V
Absolute Maximum Ratings
Symbol Conditions
Values
Units
Features
Characteristics
Symbol Conditions
Values
Units
Mechanical Data
Dimensions in mm
1)
2)
3)
4)
1
25-03-2004 SCT
© by SEMIKRON
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