RN2964 datasheet, PDF - EEWORLD Datasheet

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RN2964: DescriptionSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size260KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2964 Overview

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2964 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
package instruction	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN
Contacts	6
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V
Base Number Matches	1

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RN2961~RN2966

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2961,RN2962,RN2963,RN2964,RN2965,RN2966

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Including two devices in US6 (ultra super mini type with 6 leads)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1961~RN1966

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2961

RN2962

RN2963

RN2964

RN2965

RN2966

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

EIAJ

TOSHIBA

Weight: 6.8mg

―

2-2J1B

Equivalent Circuit

(Top View)

Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2961~2966

RN2961~2964

RN2965, 2966

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

stg

Symbol

CBO

CEO

Rating

−50

−10

−5

−100

200

150

−55~150

°C

Unit

: Total rating

2001-06-07

RN2964 Related Products

	RN2964	RN2961	RN2963	RN2962	RN2966	RN2965
Description	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	conform to	conform to	incompatible	conform to
package instruction	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN	ULTRA SUPERMINI, 2-2J1B, US6, 6 PIN
Contacts	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 1	BUILT-IN RESISTOR RATIO IS 10	BUILT-IN RESISTOR RATIO IS 21.36
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80	30	70	50	80	80
JESD-30 code	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
Number of components	2	2	2	2	2	2
Number of terminals	6	6	6	6	6	6
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	240	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V	0.3 V

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