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1N5417BK

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size26KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1N5417BK Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon,

1N5417BK Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionE-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeELLIPTICAL
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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