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BFP620FE7764

Description
NPN Silicon Germanium RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size185KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BFP620FE7764 Overview

NPN Silicon Germanium RF Transistor

BFP620FE7764 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE, HIGH RELIABILITY
Maximum collector current (IC)0.08 A
Collector-based maximum capacity0.2 pF
Collector-emitter maximum voltage2.3 V
ConfigurationSINGLE
highest frequency bandC BAND
JESD-30 codeR-PDSO-F4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON GERMANIUM
Nominal transition frequency (fT)65000 MHz
Base Number Matches1
BFP620F E7764
NPN Silicon Germanium RF Transistor
Preliminary data
High gain low noise RF transistor
Small package 1.4 x 0.8 x 0.59 mm
Outstanding noise figure
F
= 0.7 dB at 1.8 GHz
Outstanding noise figure
F
= 1.3 dB at 6 GHz
Maximum stable gain
G
ms
= 21 dB at 1.8 GHz
G
ma
= 10 dB at 6 GHz
Gold metallization for extra high reliability
to p v ie w
4
3
3
4
XYs
2
1
TSFP-4
A C s
1
2
d ir e c tio n o f u n r e e lin g
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFP620F E7764
Maximum Ratings
Parameter
Marking
R2s
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
TSFP-4
Value
2.3
7.5
7.5
1.2
80
3
185
150
-65 ... 150
-65 ... 150
Value
290
Unit
K/W
mW
°C
mA
Unit
V
-
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
96°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Oct-20-2003
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