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5962-8959845MZX

Description
Standard SRAM, 128KX8, 12ns, CMOS, DIP-32
Categorystorage   
File Size441KB,91 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

5962-8959845MZX Overview

Standard SRAM, 128KX8, 12ns, CMOS, DIP-32

5962-8959845MZX Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionDIP-32
Reach Compliance Codeunknown
Is SamacsysN
Maximum access time12 ns
JESD-30 codeR-XDIP-T32
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Package body materialUNSPECIFIED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.89 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width10 mm
Base Number Matches1
REVISIONS
LTR
H
DESCRIPTION
Add device type 41. Make corrections to case outline N, dimension b.
Add vendor CAGE 65786 as source of supply for device type 41.
Update boilerplate. Editorial changes throughout.
Add device types 42, 43, 44, 45, and 46. Editorial changes to pages
1, 3, 7-15. Update boilerplate. ksr
Added provisions to accommodate radiation-hardened devices.
Added device type 47 to drawing. glg
Corrected case outline 8 Figure 1 to show correct numbering of
terminals. Corrected Figure 2 Terminal connections. Corrected the
case outline Y Figure 1 to show the proper distance of E and E1.
Added note to Case outline Y Figure 1, to allow for bottom brazed
package as an alternative style to the side brazed package . Update
boilerplate. Editorial changes throughout. ksr
Changed the minimum value for the Q dimension on package T from
0.026 to 0.020 and removed footnote 12. Editorial changes
throughout.. ksr
Added device type 48 to drawing. ksr
Corrected typo on Figure 4 (Read Cycle). ksr
Vendor requested change in capacitance in Table I for devices 39 and
40 from 5 pF to 8 pF. ksr
DATE (YR-MO-DA)
97-03-26
APPROVED
Raymond Monnin
J
K
L
98-03-03
00-03-01
00-12-08
Raymond Monnin
Raymond Monnin
Raymond Monnin
M
02-12-19
Raymond Monnin
N
P
R
03-08-12
05-08-16
06-02-13
Raymond Monnin
Raymond Monnin
Raymond Monnin
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
R
35
R
15
R
36
R
16
R
37
R
17
R
38
R
18
REV
R
39
R
19
R
40
R
20
R
41
R
21
R
1
R
42
R
22
R
2
R
43
R
23
R
3
R
44
R
24
R
4
R
45
R
25
R
5
R
46
R
26
R
6
R
47
R
27
R
7
R
48
R
28
R
8
R
49
R
29
R
9
R
50
R
30
R
10
R
51
R
31
R
11
R
52
R
32
R
12
R
33
R
13
R
34
R
14
SHEET
PREPARED BY
Kenneth S. Rice
CHECKED BY
Raymond Monnin
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
APPROVED BY
Michael A. Frye
DRAWING APPROVAL DATE
89-04-21
REVISION LEVEL
R
MICROCIRCUIT, MEMORY, DIGITAL,
CMOS, 128K X 8 STATIC RANDOM
ACCESS MEMORY (SRAM) LOW POWER,
MONOLITHIC SILICON
SIZE
A
SHEET
CAGE CODE
67268
1 OF
52
5962-89598
5962-E261-06
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