ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Product Summary
BV
DSS
(V)
30
R
DS(ON)
(mΩ)
26
I
D
(A)
6.8
Pin Assignments
Pin Descriptions
Pin Name
Description
Channel 1/2 Source
Channel 1/2 Gate
Channel 1/2 Drain
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
S1/2
G1/2
D1/2
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
4928N X X
Package
S: SO-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 13, 2005
1/5
AF4928N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
30
±20
6.8
5.5
40
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
62.5
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
G
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=6.8A,
V
DS
=24V,
V
GS
=4.5V
V
DS
=15V,
I
D
=1A,
R
G
=3.3Ω, V
GS
=10V
R
D
=15Ω
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
15
-
-
-
9
2
6
10
9
18
6
580
150
108
0.9
Max.
-
-
26
40
3
-
1
uA
25
±100
15
-
-
-
-
-
-
930
-
-
-
nA
nC
Units
V
V/
o
C
mΩ
V
S
ns
pF
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 3)
Reverse Recovery Time
(Note 3)
Reverse Recovery Charge
2
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=6.8A, V
GS
=0V,
dl/dt=100A/µs
o
Min.
-
-
-
Typ.
-
15
9
Max.
1.3
-
-
Unit
V
ns
nC
Note 1:
Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad.
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