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MRF7S19170HSR3

Description
RF MOSFET Transistors HV7 1.9GHZ 50W
CategoryDiscrete semiconductor    The transistor   
File Size951KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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MRF7S19170HSR3 Overview

RF MOSFET Transistors HV7 1.9GHZ 50W

MRF7S19170HSR3 Parametric

Parameter NameAttribute value
Brand NameFreescale
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Manufacturer packaging codeCASE 465C-02
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
Document Number: MRF7S19170H
Rev. 2, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 50 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 17.2 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
Output Power
P
out
@ 1 dB Compression Point
170 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
MRF7S19170HR3
MRF7S19170HSR3
1930-
-1990 MHz, 50 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465B-
-03, STYLE 1
NI-
-880
MRF7S19170HR3
CASE 465C-
-02, STYLE 1
NI-
-880S
MRF7S19170HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 72°C, 25 W CW
Symbol
R
θJC
Value
(2,3)
0.25
0.31
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008, 2011. All rights reserved.
MRF7S19170HR3 MRF7S19170HSR3
1
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Freescale Semiconductor
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